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GS81302R08GE-200I PDF预览

GS81302R08GE-200I

更新时间: 2023-01-15 00:00:00
品牌 Logo 应用领域
GSI 双倍数据速率静态存储器
页数 文件大小 规格书
36页 560K
描述
DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-165

GS81302R08GE-200I 数据手册

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Preliminary  
GS81302R08/09/18/36E-333/300/250/200/167  
333 MHz–167 MHz  
165-Bump BGA  
Commercial Temp  
Industrial Temp  
144Mb SigmaDDRTM-II  
Burst of 4 SRAM  
1.8 V V  
DD  
1.8 V and 1.5 V I/O  
Features  
• Simultaneous Read and Write SigmaDDR™ Interface  
• Common I/O bus  
• JEDEC-standard pinout and package  
• Double Data Rate interface  
• Byte Write (x36 and x18) and Nybble Write (x8) function  
• Burst of 4 Read and Write  
• 1.8 V +100/–100 mV core power supply  
• 1.5 V or 1.8 V HSTL Interface  
• Pipelined read operation with self-timed Late Write  
• Fully coherent read and write pipelines  
• ZQ pin for programmable output drive strength  
• IEEE 1149.1 JTAG-compliant Boundary Scan  
• Pin-compatible with present 9Mb, 18Mb, 36Mb and 72Mb  
devices  
Bottom View  
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package  
• RoHS-compliant 165-bump BGA package available  
165-Bump, 15 mm x 17 mm BGA  
1 mm Bump Pitch, 11 x 15 Bump Array  
SigmaDDRFamily Overview  
clock inputs, not differential inputs. If the C clocks are tied  
high, the K clocks are routed internally to fire the output  
registers instead.  
The GS81302R08/09/18/36E are built in compliance with the  
SigmaDDR-II SRAM pinout standard for Common I/O  
synchronous SRAMs. They are 150,994,944-bit (144Mb)  
SRAMs. The GS81302R08/09/18/36E SigmaDDR-II SRAMs  
are just one element in a family of low power, low voltage  
HSTL I/O SRAMs designed to operate at the speeds needed to  
implement economical high performance networking systems.  
Common I/O x36 and x18 SigmaDDR-II B4 RAMs always  
transfer data in four packets. When a new address is loaded, A0  
and A1 preset an internal 2 bit linear address counter. The  
counter increments by 1 for each beat of a burst of four data  
transfer. The counter always wraps to 00 after reaching 11, no  
matter where it starts.  
Clocking and Addressing Schemes  
The GS81302R08/09/18/36E SigmaDDR-II SRAMs are  
synchronous devices. They employ two input register clock  
inputs, K and K. K and K are independent single-ended clock  
inputs, not differential inputs to a single differential clock input  
buffer. The device also allows the user to manipulate the  
output register clock inputs quasi independently with the C and  
C clock inputs. C and C are also independent single-ended  
Common I/O x8 and x9 SigmaDDR-II B4 RAMs always  
transfer data in four packets. When a new address is loaded,  
the LSBs are internally set to 0 for the first read or write  
transfer, and incremented by 1 for the next 3 transfers.  
Because the LSBs are tied off internally, the address field of a  
x8/x9 SigmaDDR-II B4 RAM is always two address pins less  
than the advertised index depth (e.g., the 16M x 9 has a 4M  
addressable index).  
Parameter Synopsis  
-333  
3.0 ns  
0.45 ns  
-300  
3.3 ns  
0.45 ns  
-250  
4.0 ns  
0.45 ns  
-200  
5.0 ns  
0.45 ns  
-167  
tKHKH  
tKHQV  
6.0 ns  
0.5 ns  
Rev: 1.01a 6/2010  
1/36  
© 2007, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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