GS78116AGB-12I

更新时间： 2024-11-23 04:19:51

品牌	Logo	应用领域
GSI		静态存储器
页数	文件大小	规格书
11页	675K
描述
512K x 16 8Mb Asynchronous SRAM

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数据手册

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GS78116AGB-12I 数据手册

GS78116AB

BGA

Commercial Temp

Industrial Temp

512K x 16

8Mb Asynchronous SRAM

8, 10, 12 ns

3.3 V V

Features

• Fast access time: 8, 10, 12 ns

• CMOS low power operation: 240/190/170 mA at minimum

cycle time

• Single 3.3 V ± 0.3 V power supply

• All inputs and outputs are TTL-compatible

• Fully static operation

• Industrial Temperature Option: –40° to 85°C

• 14 mm x 22 mm, 119-bump, 1.27 mm Pitch Ball Grid Array

package

Pin Descriptions

Description

Symbol

A0 to A18

DQ1 to DQ16

Address input

Data input/output

Chip enable input

Write enable input

Output enable input

+3.3 V power supply

• RoHS-compliant package available

Ground

Description

No connect

The GS78116A is a high speed CMOS Static RAM organized

as 524,288-words by 16-bits. Static design eliminates the need

for external clocks or timing strobes. The GS78116A operates

on a single 3.3 V power supply, and all inputs and outputs are

TTL-compatible. The GS78116 is available in a

14 mm x 22 mm BGA package.

Block Diagram

A⁰

Row

Decoder

Memory Array

Address

Input

Buffer

Column

Decoder

A18

I/O Buffer

Control

DQ16

DQ1

Rev: 1.04 5/2006

1/11

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...11

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