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GS71116GU-10I PDF预览

GS71116GU-10I

更新时间: 2024-11-17 04:55:07
品牌 Logo 应用领域
GSI 静态存储器内存集成电路
页数 文件大小 规格书
15页 220K
描述
Standard SRAM, 64KX16, 10ns, CMOS, PBGA48, 6 X 8 MM, 0.75 MM PITCH, FBGA-48

GS71116GU-10I 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.83
最长访问时间:10 nsJESD-30 代码:R-PBGA-B48
JESD-609代码:e1长度:8 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:48
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN SILVER COPPER端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:6 mm

GS71116GU-10I 数据手册

 浏览型号GS71116GU-10I的Datasheet PDF文件第2页浏览型号GS71116GU-10I的Datasheet PDF文件第3页浏览型号GS71116GU-10I的Datasheet PDF文件第4页浏览型号GS71116GU-10I的Datasheet PDF文件第5页浏览型号GS71116GU-10I的Datasheet PDF文件第6页浏览型号GS71116GU-10I的Datasheet PDF文件第7页 
GS71116TP/J/U  
SOJ, TSOP, FP-BGA  
Commercial Temp  
Industrial Temp  
10, 12, 15ns  
3.3V VDD  
Center VDD & VSS  
64K x 16  
1Mb Asynchronous SRAM  
SOJ 64K x 16 Pin Configuration  
Features  
• Fast access time: 10, 12, 15ns  
A4  
1
A5  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
• CMOS low power operation: 100/85/70 mA at min. cycle time.  
• Single 3.3V ± 0.3V power supply  
• All inputs and outputs are TTL compatible  
• Byte control  
• Fully static operation  
• Industrial Temperature Option: -40° to 85°C  
• Package line up  
A3  
A6  
2
A2  
A7  
3
A1  
OE  
4
Top view  
A0  
UB  
5
CE  
LB  
6
DQ1  
DQ2  
DQ3  
DQ4  
VDD  
DQ16  
DQ15  
DQ14  
7
8
9
J: 400mil, 44 pin SOJ package  
TP: 400mil, 44 pin TSOP Type II package  
U: 6 mm x 8 mm Fine Pitch Ball Grid Array package  
10  
11  
12  
13  
14  
15  
DQ13  
VSS  
VDD  
DQ12  
DQ11  
DQ10  
DQ9  
NC  
44 pin  
SOJ  
VSS  
DQ5  
DQ6  
DQ7  
DQ8  
WE  
Description  
The GS71116 is a high speed CMOS static RAM organized as  
65,536-words by 16-bits. Static design eliminates the need for exter-  
nal clocks or timing strobes. Operating on a single 3.3V power supply  
and all inputs and outputs are TTL compatible. The GS71116 is avail-  
able in a 6x8 mm Fine Pitch BGA package as well as in 400 mil SOJ  
and 400 mil TSOP Type-II packages.  
16  
17  
18  
A15  
A14  
A13  
A12  
NC  
A8  
A9  
19  
20  
21  
22  
A10  
A11  
NC  
Pin Descriptions  
Fine Pitch BGA 64K x 16 Bump Configuration  
Symbol  
A0 to A15  
Description  
Address input  
1
2
3
4
5
6
DQ1 to DQ16  
CE  
Data input/output  
Chip enable input  
A
B
C
D
E
F
LB  
OE  
A0  
A3  
A1  
A4  
A6  
A7  
A2  
NC  
Lower byte enable input  
(DQ1 to DQ8)  
LB  
DQ16 UB  
CE  
DQ1  
Upper byte enable input  
(DQ9 to DQ16)  
DQ14 DQ15 A5  
VSS DQ13 NC  
VDD DQ12 NC  
DQ11 DQ10 A8  
DQ2 DQ3  
DQ4 VDD  
UB  
WE  
OE  
VDD  
VSS  
NC  
Write enable input  
Output enable input  
+3.3V power supply  
Ground  
NC DQ5 VSS  
A9  
DQ7 DQ6  
WE DQ8  
G
H
DQ9 NC  
NC A12  
A10  
A13  
A11  
A14  
No connect  
A15  
NC  
6mm x 8mm, 0.75mm Bump Pitch  
Top View  
Rev: 1.06 6/2000  
1/15  
© 1999, Giga Semiconductor, Inc.  
M
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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