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GS1GEP PDF预览

GS1GEP

更新时间: 2024-01-19 19:17:51
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 77K
描述
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC, SMAE, 2 PIN, Signal Diode

GS1GEP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:SMAE, 2 PIN针数:2
Reach Compliance Code:unknown风险等级:5.41
Base Number Matches:1

GS1GEP 数据手册

 浏览型号GS1GEP的Datasheet PDF文件第2页浏览型号GS1GEP的Datasheet PDF文件第3页浏览型号GS1GEP的Datasheet PDF文件第4页 
GS1AE  
THRU  
GS1ME  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
1.0 Amp  
Silicon Rectifier  
50 to 1000 Volts  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
x
Easy Pick And Place  
High Temp Soldering: 260°C for 10 Seconds At Terminals  
Low Thermal Resistance  
Maximum Ratings  
DO-214AC  
(SMAE)  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 15°C/W Junction To Lead  
H
Cathode Band  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
J
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
GS1AE  
GS1BE  
GS1DE  
GS1GE  
GS1JE  
GS1KE  
GS1ME  
GS1A  
GS1B  
GS1D  
GS1G  
GS1J  
GS1K  
GS1M  
35V  
70V  
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
A
C
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
E
D
B
G
1000V  
DIMENSIONS  
INCHES  
MIN  
.079  
.050  
.002  
---  
MM  
MIN  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIM  
A
MAX  
.096  
.075  
.008  
.02  
MAX  
2.44  
1.90  
.20  
NOTE  
2.01  
1.27  
.05  
Average Forward  
current  
IF(AV)  
1.0A  
TJ = 75°C  
B
C
D
---  
.51  
E
.030  
.189  
.157  
.090  
.060  
.208  
.180  
.115  
.76  
1.52  
5.30  
4.57  
2.92  
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine,  
G
H
4.80  
4.00  
2.29  
J
Maximum  
IFM = 1.0A;  
TJ = 25°C*  
SUGGESTED SOLDER  
PAD LAYOUT  
0.090”  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
10µA  
50µA  
TJ = 25°C  
TJ = 125°C  
0.085”  
Typical Junction  
Capacitance  
CJ  
15pF  
Measured at  
1.0MHz, VR=4.0V  
0.070”  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
www.mccsemi.com  
1 of 4  
Revision: 7  
2006/08/14  

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