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GQM1885C2A6R2DB01D PDF预览

GQM1885C2A6R2DB01D

更新时间: 2022-02-26 14:16:40
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村田 - MURATA /
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描述
CHIP MONOLITHIC CERAMIC CAPACITOR FOR GENERAL

GQM1885C2A6R2DB01D 数据手册

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SPECIFICATIONS AND TEST METHODS  
Specification  
No  
Item  
Test Method  
Temperature  
Compensating Type  
High Dielectric  
Constant Type  
10  
Adhesive Strength  
of Termination  
No removal of the terminations or other defect should occur.  
Solder the capacitor on the test jig (glass epoxy board)shown in  
Fig.3 using an eutectic solder. Then apply 10N* force in parallel  
with the test jig for 10±1seconds.  
The soldering should be done either with an iron or using the  
reflow method and should be conducted with care so that the  
soldering is uniform and free of defects such as heat shock.  
*1N(GRM02),2N(GRM03),5N(GRM15,GRM18)  
11  
Vibration  
Resistance  
Appearance No defects or abnormalities.  
Capacitance Within the specified tolerance.  
Solder the capacitor on the test jig (glass epoxy board) in the same  
manner and under the same conditions as (10).  
The capacitor should be subjected to a simple harmonic motion  
having a total amplitude of 1.5mm, the frequency being varied  
uniformly between the approximate limits of 10 and 55Hz. The  
frequency range, from 10 to 55Hz and return to 10Hz, should be  
traversed in approximately 1 minute. This motion should be  
applied for a period of 2 hours in each 3 mutually perpendicular  
directions(total of 6 hours).  
30pF and over:Q1000  
[B1,B3,R1,R6,R7,C7,C8,L8]  
W.V.:100V :0.025max.(C0.068mF)  
:0.05max.(C0.068mF)  
W.V.:50V/25V :0.025max.  
W.V.:16V/10V :0.035max.  
W.V.:6.3V/4V :0.05max. (C3.3mF)  
:0.1max.(C3.3mF)  
Q/D.F.  
30pF and beloow:Q400+20C  
C:Nominal Capacitance(pF)  
[R9]  
W.V.:50V: 0.05max.  
[F1,F5]  
W.V.:25Vmin  
:0.05max. (C0.1mF)  
:0.09max. (C0.1mF)  
W.V.:16V/10V:0.125max.  
W.V.:6.3V:0.15max.  
12  
13  
Deflection  
Appearance No defects or abnormalities.  
Capacitance Within ±5% or± 0.5pF  
Solder the capacitor on the test jig (glass epoxy board) shown in  
Fig.1 using an eutectic solder. Then apply a force in the direction  
shown in Fig 2 for 5±1 seconds. The soldering should be done  
by the reflow method and should be conducted with care so that  
the soldering is uniform and free of defects such as heat shock.  
Within ±10%  
Change  
(Whichever is larger)  
Solderability  
75% of the terminations is to be soldered evenly and continuously.  
Immerse the capacitor in a solution of ethanol (JIS-K-8101) and  
rosin (JIS-K-5902) (25% rosin in weight propotion) .  
Preheat at 80 to 120for 10-to 30 seconds.  
of Termination  
After preheating, immerse in an eutectic solder solution for  
2±0.5 seconds at 230±5or Sn-3.0Ag-0.5Cu solder solution  
for 2±0.5 seconds at 245±5.  
Resistance to  
Soldering Heat  
14  
Appearance No defects or abnormalities.  
Preheat the capacitor at 120 to 150for 1 minute.  
Immerse the capacitor in an eutectic solder solution* or  
Sn-3.0Ag-0.5Cu solder solution at 270±5for 10±0.5 seconds.  
Set at room temperature for 24±2 hours, then measure.  
*Not apply to GRM02  
B1,B3,R1,R6,R7,R9,C7,C8,L8:Within ±7.5%  
F1,F5 :Within ±20%  
Within ±2.5% or± 0.25pF  
(Whichever is larger)  
Capacitance  
Change  
30pF and over:Q1000  
30pF and beloow:Q400+20C  
B1,B3,R1,R6,R7,C7,C8,L8]  
W.V.:100V :0.025max.(C0.068mF)  
:0.05max.(C0.068mF)  
W.V.:50V/25V :0.025max.  
W.V.:16V/10V :0.035max.  
W.V.:6.3V/4V :0.05max. (C3.3mF)  
:0.1max.(C3.3mF)  
Q/D.F.  
· Initial measurement for high dielectric constant type  
C:Nominal Capacitance(pF)  
Perform a heat treatment at 150+0/-10C for one hour and then set  
at room temperature for 24±2 hours.  
Perform the initial measurement.  
[R9]  
*Preheating for GRM32/43/55  
Table1  
W.V.:50V: 0.05max.  
[F1,F5]  
Step  
Temperature  
100C to 120C  
170C to 200C  
Time  
1 min.  
1 min.  
W.V.:25Vmin  
1
2
:0.05max. (C0.1mF)  
:0.09max. (C0.1mF)  
W.V.:16V/10V:0.125max.  
W.V.:6.3V:0.15max.  
I.R.  
More than 10,000MW or 500W·F(Whichever is smaller)  
Dielectric  
Strength  
No defects.  
Temperature  
Cycle  
15  
Appearance No defects or abnormalities.  
Fix the capacitor to the supporting jig in the same  
manner and under the same conditions as (10).  
Perform the five cycles according to the four heat  
treatments shown in the following table.  
B1,B3,R1,R6,R7,R9,C7,C8,L8:Within ±7.5%  
F1,F5 :Within ±20%  
Within ±2.5% or± 0.25pF  
(Whichever is larger)  
Capacitance  
Change  
30pF and over:Q1000  
30pF and beloow:Q400+20C  
B1,B3,R1,R6,R7,C7,C8,L8]  
W.V.:100V :0.025max.(C0.068mF)  
:0.05max.(C0.068mF)  
W.V.:50V/25V :0.025max.  
W.V.:16V/10V :0.035max.  
W.V.:6.3V/4V :0.05max. (C3.3mF)  
:0.1max.(C3.3mF)  
Q/D.F.  
Set for 24±2 hours at room temperature, then measure.  
Step  
1
Temp.(C)  
Time (min)  
30±3  
Min.  
Operating Temp.+0/-3  
C:Nominal Capacitance(pF)  
Room Temp  
2
3
4
2 to 3  
30±3  
2 to 3  
Max.  
Operating Temp.+3/-0  
[R9]  
Room Temp  
W.V.:50V: 0.05max.  
[F1,F5]  
W.V.:25Vmin  
· Initial measurement for high dielectric constant type  
:0.05max. (C0.1mF)  
:0.09max. (C0.1mF)  
W.V.:16V/10V:0.125max.  
W.V.:6.3V:0.15max.  
Perform a heat treatment at 150+0/-10C for one hour and then set  
at room temperature for 24±2 hours.  
Perform the initial measurement.  
I.R.  
More than 10,000MW or 500W·F(Whichever is smaller)  
Dielectric  
Strength  
No defects.  
JEMCGS-0001S  
3

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