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GPA806DT-BP PDF预览

GPA806DT-BP

更新时间: 2024-11-08 06:02:07
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 232K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2PAK-3

GPA806DT-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:ROHS COMPLIANT, PLASTIC, D2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.83
其他特性:HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:800 V
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10

GPA806DT-BP 数据手册

 浏览型号GPA806DT-BP的Datasheet PDF文件第2页浏览型号GPA806DT-BP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
GPA801DT  
thru  
Micro Commercial Components  
GPA807DT  
Features  
Halogen free available upon request by adding suffix "-HF"  
x
x
x
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
Lead Free Finish/RoHS Compliant(Note 1)("P" Suffix designates  
Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
8 Amp  
Glass Passivated  
Rectifier  
·
·
Moisture Sensitivity Level 1  
D2-PACK  
Maximum Ratings  
S
x
x
x
Operating Temperature: -65qC to +150qC  
Storage Temperature: -65qC to +150qC  
Maximum Thermal Resistance; 2.5qC/W Junction To Case  
V
A
1
2
3
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
50V  
G
B
MCC  
Part  
Number  
Device  
Marking  
4
GPA801DT  
GPA802DT  
GPA803DT  
GPA804DT  
GPA805DT  
GPA806DT  
GPA807DT  
GPA801DT  
GPA802DT  
GPA803DT  
GPA804DT  
GPA805DT  
GPA806DT  
GPA807DT  
35V  
70V  
D
100V  
200V  
100V  
200V  
140V  
280V  
420V  
560V  
700V  
C
400V  
600V  
400V  
600V  
H
800V  
1000V  
800V  
1000V  
E
J
K
1
3
4
Electrical Characteristics @ 25qC Unless Otherwise Specified  
HEATSINK  
Average Forward  
Current  
IF(AV)  
8A  
TC = 100qC  
DIMENSIONS  
INCHES  
MIN  
MM  
DIM  
NOTE  
Peak Forward Surge  
Current  
Maximum  
IFSM  
150A  
8.3ms, half sine  
MAX  
MIN  
8.13  
9.65  
4.06  
0.51  
1.14  
2.41  
2.43  
0.35  
2.29  
14.60  
1.14  
MAX  
9.14  
10.45  
4.83  
0.89  
1.40  
2.67  
3.03  
0.53  
2.79  
15.80  
1.40  
A
B
C
D
E
G
H
J
.320  
.380  
.160  
.020  
.045  
.095  
.096  
.014  
.090  
.575  
.045  
.359  
.411  
.190  
.035  
.055  
.105  
.120  
.021  
.110  
.625  
.055  
IF = 8A;  
TJ = 25qC  
Instantaneous Forward  
Voltage  
1.1V  
VF  
Maximum DC Reverse  
Current At Rated DC  
Blocking Voltage  
K
S
V
IR  
5uA  
Tc = 25qC  
Typical Junction  
Capacitance  
SUGGESTED SOLDER PAD LAYOUT  
CJ  
50pF  
Measured at  
1.0MHz, VR=4.0V  
.740  
18.79  
.065  
1.65  
Note: 1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.  
Inches  
mm  
.420  
10.66  
.070  
1.78  
.120  
3.05  
.330  
8.38  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/01/01  

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