Datasheet > GP1201FSS18

GP1201FSS18

更新时间： 2024-11-09 22:09:47

品牌	Logo	应用领域
DYNEX		开关双极性晶体管
页数	文件大小	规格书
9页	130K
描述
Single Switch Low V IGBT Module

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GP1201FSS18 数据手册

GP1201FSS18

Single Switch Low V_CE(SAT)IGBT Module

DS5411-1.1 January 2001

FEATURES

KEY PARAMETERS

V_CES

V_CE(sat)

I_C

1800V

2.6V

1200A

2400A

■ Low V_CE(SAT)

(typ)

(max)

■ Non Punch Through Silicon

■ Isolated Copper Baseplate

■ Low Inductance Internal Construction

■ 1200A Per Module

I_C(PK)

External connection

APPLICATIONS

■ High Reliability Inverters

■ Motor Controllers

Aux C

■ Traction Drives

■ Resonant Converters

Aux E

The Powerline range of high power modules includes dual

and single switch configurations covering voltages from 600V to

3300V and currents up to 4800A.

External connection

Fig. 1 Single switch circuit diagram

The GP1201FSS18 is a single switch 1800V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module. Designed with low V_CE(SAT)to minimise conduction

losses, the module is of particular relevance in low to medium

frequency applications. The IGBT has a wide reverse bias safe

operating area (RBSOA) ensuring reliability in demanding

applications.

Aux C

Aux E

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP1201FSS18

Note: When ordering, please use the whole part number.

Outline type code: F

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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