GP10D-TP

更新时间： 2024-11-24 13:07:59

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美微科 - MCC		/
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中文翻译

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数据手册

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GP10D-TP 数据手册

M C C

GP10A

THRU

GP10M

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

1.0 Amp Glass

Passivated Junction

Rectifiers

High temperature metallurgically bonded construction

Glass passivated cavity-free junction, Plastic Case

1.0 ampere operation at T =75^OC and 55^OC with no

thermal runaway.

Typical I less than 0.1uA

50 to 1000 Volts

DO-41

Maximum Ratings

Operating Temperature: -55^OC to +150^OC

Storage Temperature: -55^OC to +150^OC

Typical Thermal Resistance: 55^OC/W Junction to Ambient

Maximum

Recurrent

Peak Reverse

Voltage

Maximum DC

MCC

Part Number

Maximum

RMS Voltage

Blocking

Voltage

GP10A

GP10B

GP10D

GP10G

GP10J

GP10K

GP10M

50V

35V

70V

50V

100V

200V

400V

600V

800V

1000V

100V

200V

400V

600V

800V

1000V

140V

280V

420V

560V

700V

Cathode

Mark

Electrical Characteristics @ 25°C Unless Otherwise Specified

Maximum Average

Forward Current

I_F(AV)

1.0 A

T = 75^OC

Peak Forward Surge

Current

I_FSM

30A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

GP10A -10J

GP10K-10M

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

DIMENSIONS

INCHES

MIN

V_F

I_R

1.1V

1.2V

= 1.0A;

DIM

MAX

.205

.107

.034

---

MAX

5.20

2.70

.90

NOTE

T = 25^OC

.166

4.10

2.00

.70

.080

.028

5.0uA

50uA

T = 25^OC

1.000

25.40

---

T = 125^OC

Typical Junction

Capacitance

GP10A -10J

Measured at

1.0MHz, V_R=4.0V

C_J

8.0pF

7.0pF

GP10K-10M

www.mccsemi.com

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中文翻译

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