Datasheet > GP10G

GP10G

更新时间： 2024-11-09 17:00:23

品牌	Logo	应用领域
EIC		/
页数	文件大小	规格书
2页	115K
描述
Glass Passivated Rectifiers

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中文翻译

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技术参数
数据手册

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GP10G 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.75	Base Number Matches：	1

GP10G 数据手册

TH97/10561QM

TW00/17276EM

IATF 0060636

SGS TH07/1033

GLASS PASSIVATED JUNCTION

SILICON RECTIFIERS

GP10A - GP10M

PRV : 50 - 1000 Volts

Io : 1.0 Ampere

DO - 41

FEATURES :

1.00 (25.4)

* Glass passivated junction chip

* High current capability

* High reliability

0.108 (2.74)

MIN.

0.078 (1.99)

0.205 (5.20)

0.161 (4.10)

* Low reverse current

* Pb Free / RoHS Compliant

MECHANICAL DATA :

1.00 (25.4)

0.034 (0.86)

MIN.

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

0.028 (0.71)

* Polarity : Color band denotes cathode end

* Mounting position : Any

Dimensions in inches and ( millimeters )

* Weight : 0.34 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specifie.d

Single phase, half wave, 60 Hz, resistive or inductive load

For capacitive load, derate current by 20%

RATING

SYMBOL GP10A GP10B GP10D GP10G GP10J GP10K GP10M UNIT

V_RRM

V_RMS

V_DC

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Current

0.375"(9.5mm) Lead Length Ta = 75 °C

Peak Forward Surge Current

I_F(AV)

1.0

I_FSM

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

1.1

8.0

V_F

I_R

Maximum Forward Voltage at I^F= 1.0 Amp.

1.2

7.0

μA

5.0

Maximum DC Reverse Current Ta = 25 °C

I_R(H)

Trr

C_J

at rated DC Blocking Voltage

Ta = 125 °C

μA

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance (Note2)

Typical Thermal Resistance (Note3)

Operating Junction Temperature Range

Storage Temperature Range

3.0

µs

R_θJA

T_J

°C/W

°C

- 65 to + 175

T_STG

°C

Notes : (1) Reverse Recovery Test Conditions: I_F= 0.5 A, I_R= 1.0 A, Irr = 0.25 A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC

(3) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

Page 1 of 2

Rev. 00 : November 19, 2008

中文翻译

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与GP10G相关器件

型号	品牌	获取价格	描述	数据表
GP10G-A	MCC	获取价格	Rectifier Diode,
GP10G-AP	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
GP10G-BP	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
GP10GE	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
GP10GE/4E	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
GP10GE/4G	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
GP10GE/4H	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
GP10GE/51	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
GP10GE/53	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
GP10GE/54	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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