Datasheet > GNP1150TCA-Z (新产品)

GNP1150TCA-Z (新产品)

更新时间： 2024-11-03 11:08:11

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
12页	1830K
描述
GNP1150TCA-Z is an 650V GaN HEMT which has achieved the industry's highest class FOM (RonCiss、RonCoss). It is a product of the EcoGaN™ series that contributes to power conversion efficiency and size reduction by making the best use of low ON resistance and high-speed switching. ESD protection function is built in for high-reliability design. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting.

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GNP1150TCA-Z

GaN Enhancement Mode Power Transistor

Datasheet

lOutline

DFN8080AK

(5), (6), (7), (8)

V_DSS

650V

150mΩ

2.7nC

11A

R_DS(on)(Typ.)

Q_G, _typ.

(4), (3), (2), (1)

(Bottom view)

I_D(Tc=25℃)

(Top view)

Q_oss@ 400V

Q_rr

18.5nC

0nC

lInner circuit

(8), (7), (6), (5)

(1) Gate

(2) Kelvin Source

(3) Source

(4) Source

(5) Drain

(6) Drain

(7) Drain

(1)

(2)

lFeatures

・650V E-mode GaN FET

・150mΩ Resistance

・2.7nC Gate Charge

(8) Drain

(3), (4), (9)

lPackaging specifications

Embossed tape

Packing

lApplication

330

Reel size (mm)

・High switching frequency converter

・High density converter

3500

Tape width (mm)

Type

Basic ordering unit (pcs)

Taping code

Marking

GNP1150TCA

lAbsolute maximum ratings (T_a= 25°C)

Parameter

Symbol

Value

Unit

T_c= 25°C

Continuous Drain current

Pulse Drain current

I_D

T_c= 125°C

T_c= 25°C

T_c= 125°C

*1*2

I_D,pulse

V_DSS

Drain - Source Voltage

650

750

Transient Drain - Source Voltage

Gate - Source voltage (DC)

Transient Gate - Source voltage

Power dissipation(Tc=25℃)

Junction temperature

V_{DSS(transient)}

V_GSS

-10 to +6

8.5

V_{GSS(transient)}

P_tot

T_j

62.5

°C

150

www.rohm.com

TSZ22111・14・001

TSZ02201-03C3AL300040-1-2

2023.04.18 - Rev.005

1/9

12 3 4 5 6 7...12

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