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GN1L4ZM62-T2 PDF预览

GN1L4ZM62-T2

更新时间: 2024-11-23 14:42:19
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体管
页数 文件大小 规格书
6页 307K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323

GN1L4ZM62-T2 技术参数

是否Rohs认证:不符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.88
Is Samacsys:N最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):200元件数量:1
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
子类别:BIP General Purpose Small Signal表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

GN1L4ZM62-T2 数据手册

 浏览型号GN1L4ZM62-T2的Datasheet PDF文件第2页浏览型号GN1L4ZM62-T2的Datasheet PDF文件第3页浏览型号GN1L4ZM62-T2的Datasheet PDF文件第4页浏览型号GN1L4ZM62-T2的Datasheet PDF文件第5页浏览型号GN1L4ZM62-T2的Datasheet PDF文件第6页 
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

与GN1L4ZM62-T2相关器件

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323
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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323
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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323
GN1L4ZM63-T2 NEC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323
GN1L4Z-T1 NEC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M
GN1L4Z-T1-A RENESAS

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GN1L4Z-T1-A