Datasheet > GN2301

GN2301

更新时间： 2024-11-19 05:34:39

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
4页	115K
描述
SOT-23封装，2.8A，P-Channel MOSFET

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GN2301 数据手册

Gem micro

GN2301

semiconductor Inc.

Pb free

P-Channel Enhancement-Mode MOSFET (-20V, -2.8A)

PRODUCT SUMMARY

VDSS

RDS(on) (m-ohm) Max

100 @ VGS = -4.5V, I_D=-2.8A

150 @ VGS = -2.5V, I_D=-2.0A

-20V

-2.8A

Features

• Advanced Trench Process Technology

• High Density Cell Design for Ultra Low On-Resistance

• Improved Shoot-Through FOM

GN2301 Pin Assignment & Symbol

Source

Drain

3-Lead Plastic SOT-23

Pin 1: Gate 2: Source 3: Drain

Gate

Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)

Symbol

V_DS

V_GS

I_D

Parameter

Ratings

-20

Units

Drain-Source Voltage

Gate-Source Voltage

±12

-2.8

Drain Current (Continuous)

Drain Current (Pulsed) ^a

I_DM

-8

P_D

Total Power Dissipation @T_A=25^oC

0.9

I_S

Maximum Diode Forward Current

-2.2

T_j, T_stg

Operating Junction and Storage Temperature Range

Thermal Resistance Junction to Ambient (PCB mounted)^b

-55 to +150

140

°C

°C/W

R_θ

a: Repetitive Rating: Pulse width limited by the maximum junction temperation.

b: 1-in²2oz Cu PCB board

DS-GN2301-REV00

Aa1

12 3 4

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与GN2301相关器件

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GN24	ETC	获取价格	GN Package XX-Lead Plastic SSOP (Narrow .150 Inch)
GN2470	SUPERTEX	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
GN2470K4	SUPERTEX	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
GN2470K4-G	MICROCHIP	获取价格	IGBT, TO-252AA
GN28	ETC	获取价格	GN Package XX-Lead Plastic SSOP (Narrow .150 Inch)
GN2A	EIC	获取价格	GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
GN2A	SYNSEMI	获取价格	GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
GN2A_05	EIC	获取价格	GLASS PASSIVATED JUNCTION
GN2AA	HDSEMI	获取价格	SMAK Plastic-Encapsulate Diodes
GN2AA	GOOD-ARK	获取价格