是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | R-PDSO-C2 | Reach Compliance Code: | compliant |
风险等级: | 5.73 | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 1.1 V | JEDEC-95代码: | DO-214AC |
JESD-30 代码: | R-PDSO-C2 | 最大非重复峰值正向电流: | 30 A |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
最大输出电流: | 1 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
最大重复峰值反向电压: | 800 V | 最大反向恢复时间: | 1 µs |
子类别: | Rectifier Diodes | 表面贴装: | YES |
端子形式: | C BEND | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GN1K-S | GOOD-ARK |
获取价格 |
暂无描述 | |
GN1L3M | NEC |
获取价格 |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR | |
GN1L3M-A | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M | |
GN1L3M-T1 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M | |
GN1L3M-T1-A | RENESAS |
获取价格 |
GN1L3M-T1-A | |
GN1L3M-T2 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M | |
GN1L3N | NEC |
获取价格 |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR | |
GN1L3N-A | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M | |
GN1L3N-T1 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER M | |
GN1L3N-T1-A | RENESAS |
获取价格 |
GN1L3N-T1-A |