5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| GN1L3N-T2-A | RENESAS |
获取价格 |
GN1L3N-T2-A |
|
| GN1L3N-T2-AT | RENESAS |
获取价格 |
GN1L3N-T2-AT |
|
| GN1L3Z | NEC |
获取价格 |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
|
| GN1L3Z | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323 |
|
| GN1L3ZM36 | NEC |
获取价格 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 |
|
| GN1L3ZM36-T1 | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323 |
|
| GN1L3ZM36-T1-A | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323 |
|
| GN1L3ZM36-T1-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323 |
|
| GN1L3ZM36-T2 | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323 |
|
| GN1L3ZM36-T2-A | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323 |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
