Datasheet > GN01121B

GN01121B

更新时间： 2024-10-28 23:54:03

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
1页	31K
描述
Amplifier. Other

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中文翻译

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数据手册

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GN01121B 数据手册

GaAs MMICs for Cellular Phone

GN01121B

Low Noise Amplifier with through pass switch for CDMA

Features

•

Low consumption current(power save mode)

Low distortion : IIP3 = 7.5 dBm

Low noise : NF = 0.9 dB(@f = 850 MHz)

•

Characteristics Diagram

PG, NF

PG, IIP3

I_DD

Mode1 PG

5.5

4.5

Mode2 PG

Mode3 NF

Mode1

3.5

V_REF= 2.9 V

Mode1:V_DD= 2.9 V, V_ICONT= 2.9 V

Mode2:V_DD= 2.9 V, V_ICONT= Open

Mode3:V_DD= 0 V, V_ICONT= Open

2.5

Mode3 PG

1.5

Mode2

-5

Mode3

Mode2 NF

Mode1 NF

IIP3

0.5

-30

-10

780

800

820

840

860

880

900

920

Circuit current I_DD(mA)

Frequency f (MHz)

•

Mode3 : Through pass operation

Mode1 : Low input mode

P_OUT

P_IN

P_OUT

Amplifier1

(Gain1, I_DD

)

Gain = 15 dB, I _DD= 10 mA, NF = 0.9 dB

Gain =- 4 dB, I _DD= 0 mA, NF = 5 dB

Package Outline

Measurement Circuit Diagram

Unit:mm

V_DD

V_REF

+0.05

–0.02

0.12

0.2±0.05

10 nF

100 pF//22 nF

0.5 pF

20 kΩ

12 nH

Out

100 pF

(0.65) (0.65)

1.3±0.1

2.0±0.1

100 pF 33 nH

10 nF

10°

RF input

15 nH

1 : RF input

2 : V_ICONT

3 : TM

MC : Matching Circuit

V_ICONT

4 : V_REF

5 : GND

6 : V_DD

Note) In the case of using for overseas' models, please

apply smaller inductance than 33nH at IN terminal

(pin 1) and than 12nH at V_DDterminal(pin 6).

S-Mini Type 6-pin

中文翻译

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