Datasheet > GM72V66441ELT-8

GM72V66441ELT-8

更新时间： 2022-01-18 19:57:00

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
10页	82K
描述
x4 SDRAM

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GM72V66441ELT-8 数据手册

GM72V66441ET/ELT

Relationship Between Frequency and Minimum Latency

-7

-75

-8

-7K

-7J

Parameter

143 100 133 100 125 100 100 100 100 66

frequency(MHz)

Symbol

Notes

10 7.5 10

10 10 10 10 15

CK (ns)

Active command to column

command (same bank)

Active command to active

command (same bank)

Active command to Precharge

command (same bank)

Precharge command to active

command (same bank)

Write recovery or last data-in to

Precharge command (same bank)

Active command to active

command (different bank)

RCD

= [lRAS

+lRP], 1

RAS

RWL

RRD

Self refresh exit time

SREX

Last data in to active command

(Auto Precharge, same bank)

Self refresh exit to command

input

= [lRWL

+lRP], 1

APW

= [lRC]

SEC

Precharge

command to

high impedance

(CL=2)

HZP

(CL=3)

HZP

Last data out to active

command

(auto Precharge) (same bank)

APR

Last data out to

Precharge

(early Precharge)

-1

-2

-1 - 1 - 1

-1

(CL=2)

-2

-2 -2

-2

-2 - 2 - 2 - 2 - 2

(CL=3)

Column command to column

command

Write command to data in

latency

CCD

WCD

DQM to data in

DID

DQM to data out

DOD

CKE to CLK disable

CS to command disable

CLE

RSA

CDD

Power down exit to command

input

PEC

Rev. 1.1/Apr.01

-8-

1...5 6 789 10

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