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GM3904 PDF预览

GM3904

更新时间: 2024-11-01 03:39:35
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2页 227K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

GM3904 数据手册

 浏览型号GM3904的Datasheet PDF文件第2页 
ISSUED DATE :2005/04/04  
REVISED DATE :  
GTM  
CORPORATION  
GM3904  
N P N E P ITA X I A L P L A N A R T R A N S I ST O R  
Description  
The GM3904 is designed for general purpose switching and amplifier applications.  
Features  
ԦCollector-Emitter Voltage: VCEO=40V  
ԦComplementary to GM3906  
Package Dimensions  
SOT-89  
Millimeter  
REF.  
Millimeter  
Min. Max.  
3.00 REF.  
REF.  
Min.  
4.4  
Max.  
4.6  
A
B
C
D
E
F
G
H
I
J
K
4.05  
1.50  
1.30  
2.40  
0.89  
4.25  
1.70  
1.50  
2.60  
1.20  
1.50 REF.  
0.40  
1.40  
0.35  
0.52  
1.60  
0.41  
L
5q TYP.  
M
0.70 REF.  
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)  
Parameter  
Collector to Base Voltage  
Symbol  
Ratings  
Unit  
V
V
V
V
CBO  
CEO  
60  
40  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collect Current(DC)  
V
EBO  
6
200  
V
I
C
mA  
ć
ć
W
Junction Temperature  
Tj  
TsTG  
+150  
-55 ~ +150  
1
Storage Temperature Range  
Total Power Dissipation  
PD  
Electrical Characteristics(Ta = 25к,unless otherwise specified)  
Symbol  
BVCBO  
Min.  
60  
40  
6
Typ.  
Max.  
Unit  
V
Test Conditions  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
I
I
I
C
=10uA, I  
=1mA, I  
=10uA, I  
CE=30V, VBE=3V  
E
=0  
=0  
=0  
BVCEO  
BVEBO  
V
C
B
-
V
E
C
ICEX  
-
50  
200  
300  
850  
950  
-
nA  
mV  
mV  
mV  
mV  
V
*VCE(sat)1  
*VCE(sat)2  
*VBE(sat)1  
*VBE(sat)2  
*hFE1  
-
I
I
I
I
C
=10mA, I  
=50mA, I  
=10mA, I  
=50mA, I  
B
B
B
B
=1mA  
=5mA  
=1mA  
=5mA  
-
C
C
C
650  
-
40  
70  
100  
60  
30  
300  
-
V
V
V
V
V
V
V
CE=1V, I  
CE=1V, I  
CE=1V, I  
CE=1V, I  
CE=1V, I  
C
C
C
C
C
=0.1mA  
=1mA  
*hFE2  
-
*hFE3  
300  
-
=10mA  
=50mA  
=100mA  
*hFE4  
*hFE5  
-
-
fT  
MHZ  
CE=20V, I =10mA, f=100MHz  
C
Cob  
-
4
pF  
CB=5V, IE=0, f=1MHz  
* Pulse Test: Pulse WidthЉ380s, Duty CycleЉ2%  
GM3904  
Page: 1/2  

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