Datasheet > GLA2N70

GLA2N70

更新时间： 2024-11-25 03:39:31

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	304K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GLA2N70 数据手册

Pb Free Plating Product

ISSUED DATE :2005/09/14

GTM

CORPORATION

REVISED DATE :

BVDSS

DS(ON)

675V

10Ω

GLA2N70

0.2A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GLA2N70 provide the designer with the best combination of fast switching, low on-resistance and

cost-effectiveness.

Features

*Dynamic dv/dt Rating

*Simple Drive Requirement

*Repetitive Avalanche Rated

*Fast Switching

Package Dimensions

SOT-223

Millimeter

Min. Max.

13̓TYP.

REF.

Min.

6.70

Max.

7.30

2.90

0.02

0̓

3.10

0.10

10̓

2.30 REF.

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

675

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

f30

0.2

I_D@T

I_DM

P_D@T =25к

=25к

Continuous Drain Current, V_GS@5V

Pulsed Drain Current¹

=100к

0.13

0.5

Total Power Dissipation

1.13

0.01

0.5

Linear Derating Factor

Single Pulse Avalanche Energy²

W/ć

E_AS

I_AR

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and Storage Temperature Range

E_AR

0.5

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

ć/W

GLA2N70

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