Datasheet > GLA94

GLA94

更新时间： 2024-02-21 10:22:51

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	175K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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中文翻译

获取价格

数据手册

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GLA94 数据手册

ISSUED DATE :2005/03/25

REVISED DATE :

GTM

CORPORATION

GLA94

P N P E P I TA X I A L P L A N A R T R A N S I S TO R

Description

The GLA94 is designed for application requires high voltage.

Features

ԦHigh voltage: VCEO=400V (min) at I

=1mA

ԦHigh current gain: I

C=300mA at 25ć

ԦComplementary with GLA44

Package Dimensions

SOT-223

Millimeter

Min. Max.

13̓TYP.

REF.

Min.

Max.

7.30

3.10

0.10

10̓

6.70

2.90

0.02

0̓

2.30 REF.

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

Unit

Junction Temperature

+150

-55 ~ +150

Storage Temperature Range

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collect Current(DC)

TsTG

VCBO

-400

-6

-500

VCEO

VEBO

Total Power Dissipation

Electrical Characteristics(Ta = 25к)

Symbol

BVCBO

Min.

Typ.

Max.

Unit

Test Conditions

-400

=-100Ua, I

=-1mA, I =0

=-100uA, I =0

CB=-400V, I =0

CE=-400V, VBE=0

E=0

BVCEO

BVEBO

-400

-6

CBO

CES

EBO

-100

-500

-100

-350

-500

-750

EB=-6V, I

*VCE(sat)1

*VCE(sat)2

*VCE(sat)3

*VBE(sat)

=-1mA, I

=-0.1mA

=-10mA, I

=-50mA, I

=-10mA, I

=-1mA

=-5mA

=-1mA

*hFE

CE=-10V, I

C=-1mA

300

=-10mA

=-50mA

=-100mA

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

GMA94

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