Datasheet > GI817/91-E3

GI817/91-E3

更新时间： 2024-11-10 06:50:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	328K
描述
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

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数据手册

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GI817/91-E3 数据手册

GI810 thru GI818

Vishay General Semiconductor

Glass Passivated Junction Fast Switching Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

1.0 A

50 V to 1000 V

30 A

750 ns

I_R

10 µA

V_F

1.2 V

DO-204AC (DO-15)

T_jmax.

175 °C

* Glass-plastic encapsulation

technique is covered by

Patent No. 3,996,602, and

brazed-lead assembly

by Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for High Reliability

condition

Case: DO-204AC, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Cavity-free glass-passivated junction

• Fast switching for high efficiency

• Low leakage current

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• High forward surge capability

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For general purpose of medium frequency rectifica-

tion

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol GI810 GI811 GI812 GI814 GI816 GI817 GI818 Unit

Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

1.0

600

420

600

800

560

800

1000

700

Maximum RMS voltage

Maximum DC blocking voltage

100

1000

Maximum average forward rectified current 0.375"

(9.5 mm) lead length at T_A= 75 °C

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

°C

Document Number 88628

12-Oct-05

www.vishay.com

12 3 4

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与GI817/91-E3相关器件

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