Datasheet > GFC350

GFC350

更新时间： 2022-12-18 02:30:19

品牌	Logo	应用领域
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描述
N Channel Power MOSFET

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GFC350 数据手册

Gunter Semiconductor GmbH

GFC350

N Channel Power MOSFET

Chip Specification

General Description:

* Advanced Process Technology

* Dynamic dV/dt Rating

* 150℃ Operating Temperature

* Fast Switching

* Fully Avalanche Rated

Mechanical Data:

D27

Dimension

Thickness:

Metallization:

Top :

6.53mm x 6.53mm

400 µm

Backside :

CrNiAg / Au

Suggested Bonding Conditions:

Die Mounting: Solder Perform

95/5 PbSn or 92.5./2.5/5 PbAgIn

Source Bonding Wire: 20 mil Al

Absolute Maximum Rating

@Ta=25℃

Characteristics

Drain-to-Source Breakdown Voltage

Static Drain-to - Source On-resistance

Continuous Drain current ( in target package)

Operation Junction

Symbol

V(BR)DSS

RDS(ON)

ID@25℃

ID@100℃

Limit

400

Unit

Test Conditions

VGS=0V, ID=250µΑ

VGS=10V, ID=9.6Α

VGS=10V

0.3

Ω

VGS=10V

-55~150

℃

Storage Temperature

TSTR

Target Device: IRFP350

TO-247AC

190

@Tc=25℃

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