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GFC460

更新时间: 2022-11-06 02:48:27
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描述
N Channel Power MOSFET with high VDS

GFC460 数据手册

  
Gunter Semiconductor GmbH GFC460  
N Channel Power MOSFET with high VDS  
Chip Specification  
General Description:  
* Advanced Process Technology  
* Dynamic dV/dt Rating  
* 150Operating Temperature  
* Fast Switching  
* Fully Avalanche Rated  
Mechanical Data:  
D31  
Dimension  
Thickness:  
Metallization:  
Top :  
6.53mm x 9.15mm  
400 µm  
:
Al  
Backside :  
CrNiAg / Au  
Suggested Bonding Conditions:  
Die Mounting: Solder Perform  
95/5 PbSn or 92.5./2.5/5 PbAgIn  
Source Bonding Wire: 25mil Al  
Absolute Maximum Rating  
@Ta=25  
Characteristics  
Drain-to-Source Breakdown Voltage  
Static Drain-to - Source On-resistance  
Continuous Drain current ( in target package)  
Continuous Drain current ( in target package)  
Operation Junction  
Symbol  
V(BR)DSS  
RDS(ON)  
ID@25  
ID@100℃  
Tj  
Limit  
500  
Unit  
V
Test Conditions  
VGS=0V, ID=250µΑ  
VGS=10V, ID=12Α  
VGS=10V  
0.27  
20  
A
12  
A
VGS=10V  
-55~150  
-55~150  
Storage Temperature  
TSTR  
Target Device: IRFP460  
TO-247AC  
PD  
280  
W
@Tc=25℃  

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