Datasheet > GFCF30

GFCF30

更新时间： 2022-12-22 10:43:14

品牌	Logo	应用领域
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描述
N Channel High Voltage, Power MOSFET

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GFCF30 数据手册

Gunter Semiconductor GmbH

GFCF30

N Channel High Voltage, Power MOSFET

Chip Specification

General Description:

* Advanced Process Technology

* Dynamic dV/dt Rating

* 150℃ Operating Temperature

* Fast Switching

* Fully Avalanche Rated

* High Breakdown Voltage

Mechanical Data:

D17

Dimension 4.42mm x 5.23mm

Thickness:

Metallization:

Top :

480 µm

Backside :

CrNiAg / Au

Suggested Bonding Conditions:

Die Mounting: Solder Perform

95/5 PbSn or 92.5./2.5/5 PbAgIn

Source Bonding Wire: 10 mil Al

Absolute Maximum Rating

@Ta=25℃

Characteristics

Drain-to-Source Breakdown Voltage

Static Drain-to - Source On-resistance

Continuous Drain current ( in target package)

Operation Junction

Symbol

V(BR)DSS

RDS(ON)

ID@25℃

ID@100℃

Limit

900

Unit

Test Conditions

VGS=0V, ID=250µΑ

VGS=10V, ID=2.2Α

VGS=10V

Ω

3.6

2.3

VGS=10V

-55~175

℃

Storage Temperature

TSTR

Target Device: IRFBF30

TO-220AB

125

@Tc=25℃

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