Datasheet > GFC430

GFC430

更新时间： 2022-12-22 10:42:47

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描述
N Channel Power MOSFET with low RDS(on)

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GFC430 数据手册

Gunter Semiconductor GmbH

GFC430

N Channel Power MOSFET with low RDS(on)

Chip Specification

General Description:

* Advanced Process Technology

* Dynamic dV/dt Rating

* 150℃ Operating Temperature

* Fast Switching

* Fully Avalanche Rated

* Low RDS(on)

Mechanical Data:

D15

Dimension 2.92mm x 4.45mm

Thickness:

Metallization:

Top :

400 µm

Backside :

CrNiAg / Au

Suggested Bonding Conditions:

Die Mounting: Solder Perform

95/5 PbSn or 92.5./2.5/5 PbAgIn

Source Bonding Wire: 8 mil Al

Absolute Maximum Rating

@Ta=25℃

Characteristics

Drain-to-Source Breakdown Voltage

Static Drain-to - Source On-resistance

Continuous Drain current ( in target package)

Operation Junction

Symbol

V(BR)DSS

RDS(ON)

ID@25℃

ID@100℃

Limit

500

Unit

Test Conditions

VGS=0V, ID=250µΑ

VGS=10V, ID=3.0A

VGS=10V

1.5

Ω

3.2

VGS=10V

-55~150

℃

Storage Temperature

TSTR

Target Device: IRF830

TO-220AB

@Tc=25℃

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