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GF1JHE3 PDF预览

GF1JHE3

更新时间: 2024-01-07 02:27:16
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 335K
描述
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal Diode

GF1JHE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-214BA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.2
Is Samacsys:N其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:DO-214BAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:3 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

GF1JHE3 数据手册

 浏览型号GF1JHE3的Datasheet PDF文件第2页浏览型号GF1JHE3的Datasheet PDF文件第3页浏览型号GF1JHE3的Datasheet PDF文件第4页 
GF1A thru GF1M  
Vishay General Semiconductor  
Surface Mount Glass Passivated Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
VF  
1.0 A  
50 V to 1000 V  
30 A  
1.1 V, 1.2 V  
5.0 µA  
*
IR  
d
e
t
n
e
Tj max.  
175 °C  
t
a
P
* Glass-plastic encapsulation  
technique is covered by patent  
No. 3,996,602, brazed-lead  
DO-214BA (GF1)  
assembly by Patent No. 3,930,306  
and lead forming by Patent No. 5,151,846  
Features  
Mechanical Data  
• Superectifier structure for high reliability  
condition  
Case: DO-214BA, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Patented glass-plastic encapsulation technique  
• Ideal for automated placement  
• Low forward voltage drop  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current  
• High forward surge capability  
Polarity: Color band denotes cathode end  
• Meets environmental standard MIL-S-19500  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
for consumer, automotive and Telecommunication  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit  
Device marking code  
GA  
50  
GB  
GD  
GG  
400  
GJ  
GK  
GM  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
100  
200  
600  
800  
1000  
V
V
V
A
A
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
1.0  
30  
420  
600  
560  
800  
700  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current at TL = 125 °C  
IF(AV)  
IFSM  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
Operating junction and storage temperature range  
TJ,TSTG  
- 65 to + 175  
°C  
Document Number 88617  
10-Aug-05  
www.vishay.com  
1

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