Datasheet > GE28F128J3C-125

GE28F128J3C-125

更新时间： 2024-11-06 22:32:39

品牌	Logo	应用领域
英特尔 - INTEL		闪存
页数	文件大小	规格书
72页	909K
描述
Intel StrataFlash Memory (J3)

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GE28F128J3C-125 数据手册

Intel StrataFlash^®Memory (J3)

256-Mbit (x8/x16)

Datasheet

Product Features

■ Performance

■ Architecture

—110/115/120/150 ns Initial Access Speed

—Multi-Level Cell Technology: High

Density at Low Cost

—125 ns Initial Access Speed (256 Mbit

density only)

—High-Density Symmetrical 128-Kbyte

Blocks

—25 ns Asynchronous Page mode Reads

—256 Mbit (256 Blocks) (0.18µm only)

—128 Mbit (128 Blocks)

—64 Mbit (64 Blocks)

—30 ns Asynchronous Page mode Reads

(256Mbit density only)

—32-Byte Write Buffer

—32 Mbit (32 Blocks)

—6.8 µs per byte effective

■ Quality and Reliability

—Operating Temperature:

-40 °C to +85 °C

programming time

■ Software

—Program and Erase suspend support

—100K Minimum Erase Cycles per Block

—0.18 µm ETOX™ VII Process (J3C)

—Flash Data Integrator (FDI), Common

Flash Interface (CFI) Compatible

■ Security

—0.25 µm ETOX™ VI Process (J3A)

■ Packaging and Voltage

—128-bit Protection Register

—64-bit Unique Device Identifier

—64-bit User Programmable OTP Cells

—56-Lead TSOP Package

—64-Ball Intel Easy BGA Package

—Lead-free packages available

—48-Ball Intel VF BGA Package (32 and

—Absolute Protection with V_PEN= GND

—Individual Block Locking

—Block Erase/Program Lockout during

Power Transitions

64 Mbit) (x16 only)

—V_CC2.7 V to 3.6 V

—V_CCQ= 2.7 V to 3.6 V

Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash^®Memory (J3)

device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-

Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-

per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed

interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future

devices.

Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes

advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components

are ideal for code and data applications where high density and low cost are required. Examples include

networking, telecommunications, digital set top boxes, audio recording, and digital imaging.

By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from

existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash^®

memory (28F640J5 and 28F320J5) devices.

J3 memory components deliver a new generation of forward-compatible software support. By using the

Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density

upgrades and optimized write capabilities of future Intel StrataFlash^®memory devices. Manufactured on Intel^®

0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device

provides the highest levels of quality and reliability.

Notice: This document contains information on new products in production. The specifications are

subject to change without notice. Verify with your local Intel sales office that you have the latest

datasheet before finalizing a design.

Order Number: 290667-021

March 2005

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与GE28F128J3C-125相关器件

型号	品牌	获取价格	描述	数据表
GE28F128J3C-150	INTEL	获取价格	Intel StrataFlash Memory (J3)
GE28F128L18B105	NUMONYX	获取价格	Flash, 8MX16, 105ns, PBGA56, 0.75 MM PITCH, VFBGA-56
GE28F128L18B85	INTEL	获取价格	StrataFlash Wireless Memory
GE28F128L18B95	INTEL	获取价格	Flash, 8MX16, 88ns, PBGA56, 0.75 MM PITCH, VFBGA-56
GE28F128L18T105	NUMONYX	获取价格	Flash, 8MX16, 105ns, PBGA56, 0.75 MM PITCH, VFBGA-56
GE28F128L18T85	INTEL	获取价格	StrataFlash Wireless Memory
GE28F128L18T90	INTEL	获取价格	Flash, 8MX16, 90ns, PBGA56
GE28F128L18T95	INTEL	获取价格	Flash, 8MX16, 88ns, PBGA56, 0.75 MM PITCH, VFBGA-56
GE28F128L30B110	INTEL	获取价格	1.8 Volt Intel StrataFlash㈢ Wireless Memo
GE28F128L30B85	INTEL	获取价格	1.8 Volt Intel StrataFlash㈢ Wireless Memo

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