Datasheet > GDZ33C-35B

GDZ33C-35B

更新时间： 2024-11-15 07:41:35

品牌	Logo	应用领域
CHENG-YI		测试二极管
页数	文件大小	规格书
4页	62K
描述
Zener Diode,

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中文翻译

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技术参数
数据手册

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GDZ33C-35B 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.8	Base Number Matches：	1

GDZ33C-35B 数据手册

GDZ2.0~GDZ56

PB FREE PRODUCT

AXIAL LEAD ZENER DIODES

Unit: inch (mm)

DO-35

500 mWatts

POWER

VOLTAGE

2.0 to 56 Volts

FEATURES

.020(0.52)TYP.

• Planar Die construction

• 500mW Power Dissipation

• Ideally Suited for Automated Assembly Processes

MECHANICAL DATA

• Case: Molded Glass DO-35

• Terminals: Solderable per MIL-STD-202, Method 208

• Polarity: See Diagram Below

• Approx. Weight: 0.13 grams

• Mounting Position: Any

.079(2.0)MAX.

• Ordering information

Suffix : “ -35 ” to order DO-35 Package

• Packing information

- 2K per Bulk box

T/R - 10K per 13" plastic Reel

T/B - 5K per horiz. tape & Ammo box

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Parameter

Power Dissipation at Tamb = 25 ^OC

Symbol

Value

500

Units

^OC

TOT

Junction Temperature

175

Storage Temperature Range

-65 to +175

^OC

Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.

Parameter

Symbol

RthA

Min.

Typ.

Max.

Units

Thermal Resistance Junction to Ambient Air

0.3

K/mW

Forward Voltage at IF = 100mA

Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.

12 3 4

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