GD30PIX65C5S
IGBT Module
IGBT-brake Characteristics TC=25oC unless otherwise noted
Symbol
Parameter
Test Conditions
IC=30A,VGE=15V,
Tj=25oC
Min. Typ. Max. Unit
1.45 1.90
Collector to Emitter
Saturation Voltage
IC=30A,VGE=15V,
VCE(sat)
1.60
1.70
5.8
V
Tj=125oC
IC=30A,VGE=15V,
Tj=150oC
Gate-Emitter Threshold IC=0.48mA,VCE=VGE,
Voltage
Collector Cut-Off
Current
Gate-Emitter Leakage
Current
VGE(th)
ICES
5.1
6.5
1.0
V
Tj=25oC
VCE=VCES,VGE=0V,
mA
nA
Tj=25oC
VGE=VGES,VCE=0V,
Tj=25oC
IGES
400
RGint
Cies
Internal Gate Resistance
Input Capacitance
Reverse Transfer
Capacitance
0
3.48
Ω
nF
VCE=25V,f=1MHz,
VGE=0V
Cres
0.07
nF
QG
td(on)
tr
td(off)
tf
Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
VGE=-15…+15V
0.21
20
16
112
36
μC
ns
ns
ns
ns
VCC=300V,IC=30A,
RG=15Ω,VGE=±15V,
Tj=25oC
Eon
Eoff
0.50
0.50
mJ
mJ
Turn-Off Switching
Loss
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
20
21
128
48
ns
ns
ns
ns
VCC=300V,IC=30A,
RG=15Ω,VGE=±15V,
Tj=125oC
Eon
Eoff
0.65
0.60
mJ
mJ
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
20
22
144
52
ns
ns
ns
ns
VCC=300V,IC=30A,
RG=15Ω,VGE=±15V,
Tj=150oC
Eon
Eoff
0.75
0.64
mJ
mJ
tP≤6μs,VGE=15V,
Tj=150oC,VCC=360V,
VCEM≤650V
ISC
SC Data
150
A
©2018 STARPOWER Semiconductor Ltd.
2/10/2018
5/13
Preliminary