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GD30PJX65F1S

更新时间： 2024-04-09 19:02:55

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GD30PJX65F1S 数据手册

GD30PJX65F1S

IGBT Module

STARPOWER

SEMICONDUCTOR

IGBT

GD30PJX65F1S

650V/30A PIM in one-package

General Description

STARPOWER IGBT Power Module provides ultra

low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as

general inverters and UPS.

Features



Low V_CE(sat)Trench IGBT technology

6μs short circuit capability

_CE(sat)with positive temperature coefficient

Maximum junction temperature 175^oC

Low inductance case

Fast & soft reverse recovery anti-parallel FWD

Isolated heatsink using DBC technology

Pre-applied phase change material

Typical Applications



Inverter for motor drive

AC and DC servo drive amplifier

Uninterruptible power supply

Equivalent Circuit Schematic

1/29/2019

1/12

Preliminary

12 3 4 5 6 7...12

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