Datasheet > GD20PIK60C5S

GD20PIK60C5S

更新时间： 2024-04-09 18:58:57

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
12页	944K
描述
C5.0.PIM

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GD20PIK60C5S 数据手册

GD20PIK60C5S

IGBT Module

Diode-brake Characteristics T_C=25℃ unless otherwise noted

Symbol

V_F

Parameter

Diode Forward

Vol tage

Test Conditions

I_F=20A,V_GE=0V,T_j=25℃

I_F=20A,V_GE=0V,T_j=125℃

Min. Typ . Max. Unit

1.30 1.75

1.25

Q_r

Recovered Charge

Peak Reverse

Recovery Current -di/dt=1400A/μs,V_GE=-15V

1.1

μC

V_R=300V,I_F=20A,

I_RM

T_j=25℃

Reverse Recovery

Energy

Recovered Charge

E_rec

Q_r

0.27

1.7

μC

Peak Reverse

V_R=300V,I_F=20A,

Recovery Current -di/dt=1400A/μs,V_GE=-15V

I_RM

T_j=125℃

Reverse Recovery

Energy

E_rec

0.43

NTC Characteristics T_C=25℃ unless otherwise noted

Symbol

R₂₅

∆R/R

P₂₅

Parameter

Rated Resistance

Deviation of R₁₀₀T_C=100℃,R₁₀₀=493.3Ω

Power Dissipation

Test Conditions

Min. Typ . Max. Unit

5.0

kΩ

-5

20.0

R₂=R₂₅exp[B_25/50(1/T₂-

1/(298.15K))]

B_25/50

B-value

3375

Module Characteristics T_C=25℃ unless otherwise noted

Symbol

L_CE

Parameter

Min.

Typ .

Max.

Unit

Stray Inductance

R_CC’+EE’

R_AA’+CC’

4.00

3.00

Module Lead Resistance,Terminal to Chip

mΩ

Junction-to-Case (per IGBT-inverter)

Junction-to-Case (per Diode-inverter)

Junction-to-Case (per Diode-rectifier)

Junction-to-Case (per IGBT-brake-chopper)

Junction-to-Case (per Diode-brake-chopper)

Case-to-Sink (per IGBT-inverter)

Case-to-Sink (per Diode-inverter)

Case-to-Sink (per Diode-rectifier)

Case-to-Sink (per IGBT-brake-chopper)

Case-to-Sink (per Diode-brake-chopper)

Case-to-Sink

0.966

2.226

1.350

1.000

2.323

R_θJC

K/W

0.286

0.658

0.399

0.296

0.687

0.02

R_θCS

K/W

R_θCS

K/W

N.m

Mounting Torque, Screw:M5

Weight of Module

3.0

6.0

200

1/29/2014

6/12

NI01

1...3 4 567 8 9...12

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