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GD225HFY120C6S PDF预览

GD225HFY120C6S

更新时间: 2024-04-09 19:01:35
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 199K
描述
C6.1-Half Bridge

GD225HFY120C6S 数据手册

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GD225HFY120C6S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD225HFY120C6S  
1200V/225A 2 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
general inverter and UPS.  
Features  
Low VCE(sat) Trench IGBT technology  
10μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Maximum junction temperature 175oC  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Inverter for motor drive  
AC and DC servo drive amplifier  
Uninterruptible power supply  
Equivalent Circuit Schematic  
©2018 STARPOWER Semiconductor Ltd.  
9/30/2018  
1/9  
SN0B  

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