Datasheet > GD100FFY120C5S

GD100FFY120C5S

更新时间： 2024-04-09 19:03:04

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
9页	229K
描述
C5.2-3 Phase Bridge with NTC

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GD100FFY120C5S 数据手册

GD100FFY120C5S

IGBT Module

Diode Characteristics T_C=25^oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

I_F=100A,V_GE=0V,T_j=25^oC

I_F=100A,V_GE=0V,T_j=125^oC

I_F=100A,V_GE=0V,T_j=150^oC

1.70 2.15

Diode Forward

Voltage

V_F

1.65

9.0

Q_r

Recovered Charge

Peak Reverse

Recovery Current -di/dt=2800A/μs,V_GE=-15V

Reverse Recovery

Energy

Recovered Charge

Peak Reverse

Recovery Current -di/dt=2800A/μs,V_GE=-15V

Reverse Recovery

Energy

Recovered Charge

Peak Reverse

Recovery Current -di/dt=2800A/μs,V_GE=-15V

Reverse Recovery

Energy

μC

V_R=600V,I_F=100A,

I_RM

110

T_j=25^oC

E_rec

Q_r

3.32

16.2

120

μC

V_R=600V,I_F=100A,

I_RM

T_j=125^oC

E_rec

Q_r

5.70

19.5

123

μC

V_R=600V,I_F=100A,

I_RM

T_j=150^oC

E_rec

7.13

NTC Characteristics T_C=25^oC unless otherwise noted

Symbol

R₂₅

∆R/R

P₂₅

Parameter

Test Conditions

Min. Typ. Max. Unit

Rated Resistance

5.0

kΩ

Deviation of R₁₀₀T_C=100^oC,R₁₀₀=493.3Ω

-5

Power Dissipation

20.0

R₂=R₂₅exp[B_25/50(1/T₂-

1/(298.15K))]

R₂=R₂₅exp[B_25/80(1/T₂-

1/(298.15K))]

R₂=R₂₅exp[B_25/100(1/T₂-

1/(298.15K))]

B_25/50

B_25/80

B_25/100

B-value

3375

3411

3433

B-value

Module Characteristics T_C=25^oC unless otherwise noted

Symbol

L_CE

R_CC’+EE’

Parameter

Min.

Typ.

1.80

Max.

Unit

mΩ

Stray Inductance

Module Lead Resistance, Terminal to Chip

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

Mounting Torque, Screw M5

Weight of Module

0.293

0.505

R_thJC

K/W

0.190

0.327

0.020

R_thCH

K/W

3.0

6.0

N.m

200

12/6/2017

4/9

SN0D

1 2 345 6 7...9

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