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GD100HFF120C1S PDF预览

GD100HFF120C1S

更新时间: 2024-04-09 19:01:01
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 168K
描述
C1.0-Half Bridge

GD100HFF120C1S 数据手册

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GD100HFF120C1S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD100HFF120C1S  
1200V/100A 2 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
switching speed as well as short circuit ruggedness.  
They are designed for the applications such as  
electronic welder and inductive heating.  
Features  
Low VCE(sat) Trench IGBT technology  
CE(sat) with positive temperature coefficient  
V
Low switching losses  
Maximum junction temperature 175oC  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Switching mode power supply  
Inductive heating  
Electronic welder  
Equivalent Circuit Schematic  
©2016 STARPOWER Semiconductor Ltd.  
1/27/2016  
1/9  
UX01  

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