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GD100HFK120C1S PDF预览

GD100HFK120C1S

更新时间: 2024-04-09 19:03:01
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
8页 217K
描述
C1.0.Half Bridge

GD100HFK120C1S 数据手册

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GD100HFK120C1S  
IGBT Module  
STARPOWER  
SEMICONDUCTORTM  
IGBT  
GD100HFK120C1S  
Molding Type Module  
1200V/100A 2 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction and switching loss as well as short circuit  
ruggedness.They are designed for the applications such  
as UPS and SMPS.  
Features  
z
z
z
z
z
z
z
Low VCE(sat) non punch through IGBT technology  
10μs short circuit capability  
VCE(sat) with positive temperature coefficient  
Latch-up free  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Equivalent Circuit Schematic  
Typical Applications  
z
z
z
UPS  
Switching mode power supplies  
Electronic welders at fSW up to 25kHz  
Absolute Maximum Ratings TC=25unless otherwise noted  
Symbol  
VCES  
Description  
GD100HFK120C1S  
Units  
Collector-Emitter Voltage  
1200  
V
©2009 STARPOWER Semiconductor Ltd.  
6/9/2009  
1/8 Rev.A  

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