5秒后页面跳转
GD100HFT120C1S_G8 PDF预览

GD100HFT120C1S_G8

更新时间: 2024-04-09 18:59:25
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 305K
描述
C1.0.Half Bridge

GD100HFT120C1S_G8 数据手册

 浏览型号GD100HFT120C1S_G8的Datasheet PDF文件第2页浏览型号GD100HFT120C1S_G8的Datasheet PDF文件第3页浏览型号GD100HFT120C1S_G8的Datasheet PDF文件第4页浏览型号GD100HFT120C1S_G8的Datasheet PDF文件第5页浏览型号GD100HFT120C1S_G8的Datasheet PDF文件第6页浏览型号GD100HFT120C1S_G8的Datasheet PDF文件第7页 
GD100HFT120C1S_G8  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD100HFT120C1S_G8  
1200V/100A 2 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
general inverters and UPS.  
Features  
Low VCE(sat) Trench IGBT technology  
10μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Maximum junction temperature 175oC  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Inverter for motor drive  
AC and DC servo drive amplifier  
Uninterruptible power supply  
Equivalent Circuit Schematic  
©2015 STARPOWER Semiconductor Ltd.  
1/14/2015  
1/9  
RN0A  

与GD100HFT120C1S_G8相关器件

型号 品牌 描述 获取价格 数据表
GD100HFT120C1S_T4 STARPOWER C1.0.Half Bridge

获取价格

GD100HFT120C1S_T4F STARPOWER C1.0.Half Bridge

获取价格

GD100HFT120C2S_T4F STARPOWER C2.0.Half Bridge

获取价格

GD100HFT120C8S_T4F STARPOWER C8.0.Half Bridge

获取价格

GD100HFT170C1S STARPOWER C1.0.Half Bridge

获取价格

GD100HFT170C2S HB 1700V/100A 2 in one-package

获取价格