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GC08MPS12-252 PDF预览

GC08MPS12-252

更新时间: 2024-11-27 01:21:51
品牌 Logo 应用领域
GENESIC /
页数 文件大小 规格书
7页 441K
描述
Silicon Carbide Schottky Diode

GC08MPS12-252 数据手册

 浏览型号GC08MPS12-252的Datasheet PDF文件第2页浏览型号GC08MPS12-252的Datasheet PDF文件第3页浏览型号GC08MPS12-252的Datasheet PDF文件第4页浏览型号GC08MPS12-252的Datasheet PDF文件第5页浏览型号GC08MPS12-252的Datasheet PDF文件第6页浏览型号GC08MPS12-252的Datasheet PDF文件第7页 
GCꢀ8MPSꢁꢂ-ꢂ5ꢂ  
ꢀꢁꢂꢂ V SiC MPS™ Diode  
VRRM  
IF (Tc  
=
=
=
1200 V  
20 A  
Silicon Carbide Schottky Diode  
=
135°C)  
QC  
33 nC  
Features  
Package  
High Avalanche (UIS) Capability  
Enhanced Surge Current Capability  
Superior Figure of Merit QC/IF  
Case  
2
Low Thermal Resistance  
175 °C Maximum Operating Temperature  
Temperature Independent Switching Behavior  
Positive Temperature Coefficient of VF  
1
TO-252-2L  
Extremely Fast Switching Speeds  
Advantages  
Applications  
Low Standby Power Losses  
Improved Circuit Efficiency (Lower Overall Cost)  
Low Switching Losses  
Ease of Paralleling without Thermal Runaway  
Smaller Heat Sink Requirements  
Low Reverse Recovery Current  
Low Device Capacitance  
Boost Diode in Power Factor Correction (PFC)  
Switched Mode Power Supply (SMPS)  
Uninterruptible Power Supply (UPS)  
Motor Drives  
Freewheeling / Anti-parallel Diode in Inverters  
Solar Inverters  
LED and HID Lighting  
Low Reverse Leakage Current  
AC-DC Converters & Auxiliary Power Supplies  
Absolute Maximum Ratings (At TC = 25 °C Unless Otherwise Stated)  
Parameter  
Symbol  
Conditions  
Values  
1200  
40  
Unit  
Repetitive Peak Reverse Voltage  
VRRM  
V
TC = 25 °C, D = 1  
TC = 135 °C, D = 1  
Continuous Forward Current  
IF  
20  
A
A
TC = 166 °C, D = 1  
8
TC = 25 °C, tP = 10 ms  
TC = 150 °C, tP = 10 ms  
TC = 25 °C, tP = 10 ms  
TC = 150 °C, tP = 10 ms  
65  
Non-Repetitive Peak Forward Surge  
Current, Half Sine Wave  
IF,SM  
52  
38  
Repetitive Peak Forward Surge Current,  
Half Sine Wave  
IF,RM  
A
A
26  
Non-Repetitive Peak Forward Surge  
Current  
IF,max  
TC = 25 °C, tP = 10 µs  
610  
i2t Value  
∫i2 dt  
EAS  
TC = 25 °C, tP = 10 ms  
L = 3 mH, IAS = 8 A  
VR = 0 ~ 960 V  
28  
90  
A2s  
mJ  
V/ns  
W
Non-Repetitive Avalanche Energy  
Diode Ruggedness  
dV/dt  
Ptot  
100  
Power Dissipation  
TC = 25 °C  
272  
Operating and Storage Temperature  
Tj , Tstg  
-55 to 175  
°C  
Aug 2018 Rev1.2  
www.genesicsemi.com/schottky_mps/GC08MPS12-252.pdf  
Page 1 of 7  

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