GCꢀ8MPSꢁꢂ-ꢂ5ꢂ
ꢀꢁꢂꢂ V SiC MPS™ Diode
VRRM
IF (Tc
=
=
=
1200 V
20 A
Silicon Carbide Schottky Diode
=
135°C)
QC
33 nC
Features
Package
• High Avalanche (UIS) Capability
• Enhanced Surge Current Capability
• Superior Figure of Merit QC/IF
Case
2
• Low Thermal Resistance
• 175 °C Maximum Operating Temperature
• Temperature Independent Switching Behavior
• Positive Temperature Coefficient of VF
1
TO-252-2L
•
Extremely Fast Switching Speeds
Advantages
Applications
• Low Standby Power Losses
• Improved Circuit Efficiency (Lower Overall Cost)
• Low Switching Losses
• Ease of Paralleling without Thermal Runaway
• Smaller Heat Sink Requirements
• Low Reverse Recovery Current
• Low Device Capacitance
• Boost Diode in Power Factor Correction (PFC)
• Switched Mode Power Supply (SMPS)
• Uninterruptible Power Supply (UPS)
• Motor Drives
• Freewheeling / Anti-parallel Diode in Inverters
• Solar Inverters
• LED and HID Lighting
•
Low Reverse Leakage Current
•
AC-DC Converters & Auxiliary Power Supplies
Absolute Maximum Ratings (At TC = 25 °C Unless Otherwise Stated)
Parameter
Symbol
Conditions
Values
1200
40
Unit
Repetitive Peak Reverse Voltage
VRRM
V
TC = 25 °C, D = 1
TC = 135 °C, D = 1
Continuous Forward Current
IF
20
A
A
TC = 166 °C, D = 1
8
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
65
Non-Repetitive Peak Forward Surge
Current, Half Sine Wave
IF,SM
52
38
Repetitive Peak Forward Surge Current,
Half Sine Wave
IF,RM
A
A
26
Non-Repetitive Peak Forward Surge
Current
IF,max
TC = 25 °C, tP = 10 µs
610
i2t Value
∫i2 dt
EAS
TC = 25 °C, tP = 10 ms
L = 3 mH, IAS = 8 A
VR = 0 ~ 960 V
28
90
A2s
mJ
V/ns
W
Non-Repetitive Avalanche Energy
Diode Ruggedness
dV/dt
Ptot
100
Power Dissipation
TC = 25 °C
272
Operating and Storage Temperature
Tj , Tstg
-55 to 175
°C
Aug 2018 Rev1.2
www.genesicsemi.com/schottky_mps/GC08MPS12-252.pdf
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