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GC08MPS12-252_V01 PDF预览

GC08MPS12-252_V01

更新时间: 2024-01-24 17:30:39
品牌 Logo 应用领域
GENESIC /
页数 文件大小 规格书
7页 320K
描述
Silicon Carbide Schottky Diode

GC08MPS12-252_V01 数据手册

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GC08MPS12-252  
1200V 8A SiC Schottky MPS™ Diode  
VRRM  
IF (Tc  
=
=
=
1200 V  
20 A  
Silicon Carbide Schottky Diode  
=
135°C)  
QC  
19 nC  
Features  
Package  
Case  
High Avalanche (UIS) Capability  
Enhanced Surge Current Capability  
Superior Figure of Merit QC/IF  
Case  
K
A
Low Thermal Resistance  
175 °C Maximum Operating Temperature  
Temperature Independent Switching Behavior  
Positive Temperature Coefficient of VF  
K
TO-252-2  
A
Extremely Fast Switching Speeds  
Advantages  
Applications  
Low Standby Power Losses  
Improved Circuit Efficiency (Lower Overall Cost)  
Low Switching Losses  
Boost Diode in Power Factor Correction (PFC)  
Switched Mode Power Supply (SMPS)  
Uninterruptible Power Supply (UPS)  
Motor Drives  
Ease of Paralleling without Thermal Runaway  
Smaller Heat Sink Requirements  
Low Reverse Recovery Current  
Low Device Capacitance  
Freewheeling / Anti-parallel Diode in Inverters  
Solar Inverters & Wind Energy Converters  
Electric Vehicles (EV) & DC Fast Charging  
Low Reverse Leakage Current  
Induction Heating & Welding  
Absolute Maximum Ratings (At TC = 25 °C Unless Otherwise Stated)  
Parameter  
Symbol  
Conditions  
Values  
1200  
40  
Unit  
Repetitive Peak Reverse Voltage  
VRRM  
V
TC = 25 °C, D = 1  
TC = 135 °C, D = 1  
Continuous Forward Current  
IF  
20  
A
A
TC = 165 °C, D = 1  
8
TC = 25 °C, tP = 10 ms  
TC = 150 °C, tP = 10 ms  
TC = 25 °C, tP = 10 ms  
TC = 150 °C, tP = 10 ms  
64  
Non-Repetitive Peak Forward Surge  
Current, Half Sine Wave  
IF,SM  
52  
38  
Repetitive Peak Forward Surge Current,  
Half Sine Wave  
IF,RM  
A
A
27  
Non-Repetitive Peak Forward Surge  
Current  
i2t Value  
IF,max  
TC = 25 °C, tP = 10 µs  
320  
∫i2 dt  
EAS  
TC = 25 °C, tP = 10 ms  
L = 3.3 mH, IAS = 8 A  
VR = 0 ~ 960 V  
21  
105  
A2s  
mJ  
V/ns  
W
Non-Repetitive Avalanche Energy  
Diode Ruggedness  
dV/dt  
Ptot  
200  
Power Dissipation  
TC = 25 °C  
259  
Operating and Storage Temperature  
Tj , Tstg  
-55 to 175  
°C  
April 2019 Rev1.3  
www.genesicsemi.com/schottky_mps/GC08MPS12-252.pdf  
Page 1 of 7  

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