Datasheet > GBU4M

GBU4M

更新时间： 2024-11-12 04:09:47

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
2页	107K
描述
SILICON BRIDGE RECTIFIERS

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中文翻译

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GBU4M 数据手册

GALAXY ELECTRICAL

GBU4A --- GBU4M

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 4.0 A

SILICON BRIDGE RECTIFIERS

FEATURES

Ideal for printed circuit board

GBU

.933(23.7)

.894(22.7)

Reliable low cost construction utilizing molded

plastic technique

.140(3.56)

.130(3.30)

.185(4.7)

.165(4.2)

.160(4.1)

.140(3.5)

Plastic materrial has U/L flammability classification

.310(7.9)

.290(7.4)

.085(2.16)

.065(1.65)

.740(18.8)

.720(18.3)

94V-O

.075(1.9)R.TYP.

Mounting position: Any

Glass passivated chip junctions

.080(2.03)

.060(1.52)

.710(18)

.690(17.5)

.100(2.54)

.085(2.16)

.050(1.27)

.040(1.02)

.085(2.18)

.075(1.90)

.190(4.83)

.210(5.33)

.022(.56)

.018(.46)

inch(mm)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

GBU GBU GBU GBU GBU GBU GBU

UNITS

100

400

280

400

4.0

1000

700

200

140

200

600

420

600

800

560

800

Maximum recurrent peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

1000

Maximum DC blocking voltage

Maximum average forw ard Tc=100

output current @T_A=40

(note 1)

I_F(AV)

3.0

(note 2)

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

I_FSM

150.0

Maximum instantaneous forw ard voltage

at 2.0 A

1.0

V_F

I_R

5.0

Maximum reverse current

@T_A=25

500.0

at rated DC blocking voltage @T_A=125

Typical junction capacitance per leg (note 3)

100

C_J

R_θJA

R_θJC

T_J

22.0

4.2

Typical thermal resistance per leg

(note 2)

(note 1)

Operating junction temperature range

Storage temperature range

- 55 ---- + 150

T_STG

NOTE: 1. Unit case mounted on 1.6x1.6x0.06" thick (4.0x4.0x0.15cm) AI. Plate.

www.galaxycn.com

2. Units mounted on P.C.B. with 0.5x0.5" (12x12mm) copper pads and 0.375" (9.5mm) lead length.

3. Measured at 1.0 MHz and applied rev erse v oltage of 4.0 v olts.

BLGALAXY ELECTRICAL

Document Number 0287025

中文翻译

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与GBU4M相关器件

型号	品牌	获取价格	描述	数据表
GBU4M(LS)	DIODES	获取价格	4A GLASS PASSIVATED BRIDGE RECTIFIER
GBU4M-BP	MCC	获取价格	4 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
GBU4M-E3	VISHAY	获取价格	DIODE 3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBU, 4 PIN, B
GBU4M-E3/1	VISHAY	获取价格	DIODE 3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Recti
GBU4M-E3/45	VISHAY	获取价格	Glass Passivated Single-Phase Bridge Rectifier
GBU4M-E3/51	VISHAY	获取价格	Diode Rectifier Bridge Single 1KV 4A 4-Pin Case GBU Bulk
GBU4M-E3/72	VISHAY	获取价格	Bridge Rectifier Diode, 4A, 1000V V(RRM),
GBU4M-LF	WTE	获取价格	Bridge Rectifier Diode, 1 Phase, 4A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBU,
GBU4M-M3/45	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 3A, 1000V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIAN
GBU4M-M3/51	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 3A, 1000V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIAN

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