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GBU4B PDF预览

GBU4B

更新时间: 2024-11-15 22:39:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管IOT局域网
页数 文件大小 规格书
3页 59K
描述
4.0 Ampere Bridge Rectifiers

GBU4B 数据手册

 浏览型号GBU4B的Datasheet PDF文件第2页浏览型号GBU4B的Datasheet PDF文件第3页 
GBU4A - GBU4M  
0.125 X 45O  
(3.2) Typ  
0.880 (22.3)  
0.860 (21.8)  
0.020 R  
TYP  
0.160 (4.1)  
0.140 (3.5)  
0.310 (7.9)  
0.290 (7.4)  
Features  
+
+
0.740 (18.8)  
0.720 (18.3)  
0.085 (2.16)  
0.065 (1.65)  
0.075 R  
(1.9)  
Surge overload rating: 150 amperes peak.  
Reliable low cost construction utilizing  
molded plastic technique.  
+
~
~
0.080 (2.03)  
0.060 (1.52)  
0.710 (18.0)  
0.690 (17.5)  
Ideal for printed circuit board.  
0.100 (2.54)  
0.085 (2.16)  
GBU  
0.080 (2.03)  
0.065 (1.65)  
0.050 (1.27)  
0.040 (1.02)  
0.050 (1.3)  
0.040 (1.0)  
Dimensions are in:  
inches (mm)  
0.210 (5.3)  
0.190 (4.8)  
4.0 Ampere Bridge Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
IO  
4.0  
3.0  
A
A
Average Rectified Current  
@ TA = 100°C  
@ TA = 40°C  
Peak Forward Surge Current  
if(surge)  
8.3 ms single half-sine-wave  
Superimposed on rated load (JEDEC method)  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient,** per leg  
150  
A
PD  
6.9  
55  
19  
W
mW/°C  
°C/W  
RθJA  
Tstg  
TJ  
Storage Temperature Range  
-55 to +150  
-55 to +150  
°C  
°C  
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
**Device mounted on PCB with 0.5 x 0.5" (12 x 12 mm).  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Device  
Units  
4A  
50  
35  
50  
4B  
100  
70  
4D  
200  
140  
200  
4G  
400  
280  
400  
4J  
4K  
4M  
Peak Repetitive Reverse Voltage  
Maximum RMS Input Voltage  
600  
420  
600  
800 1000  
560 700  
800 1000  
V
V
V
100  
DC Reverse Voltage (Rated VR)  
Maximum Reverse Leakage, per element  
5.0  
500  
A
A
µ
µ
@ rated VR  
T = 25 C  
°
A
T = 125 C  
°
A
Maximum Forward Voltage Drop, per element  
@ 4.0 A  
1.0  
93  
V
I2t rating for fusing  
t < 8.35 ms  
A2Sec  
GBU4A-GBU4M, Rev. A  
1999 Fairchild Semiconductor Corporation  

GBU4B 替代型号

型号 品牌 替代类型 描述 数据表
GBU4B-E3/51 VISHAY

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