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GBU4B-BP-HF PDF预览

GBU4B-BP-HF

更新时间: 2024-11-16 13:07:55
品牌 Logo 应用领域
美微科 - MCC 整流二极管桥式整流二极管局域网
页数 文件大小 规格书
2页 117K
描述
Bridge Rectifier Diode,

GBU4B-BP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.02其他特性:UL RECOGNIZED
最小击穿电压:100 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-T4湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:4 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260最大重复峰值反向电压:100 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:10
Base Number Matches:1

GBU4B-BP-HF 数据手册

 浏览型号GBU4B-BP-HF的Datasheet PDF文件第2页 
M C C  
GBU4A  
THRU  
GBU4M  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
4 Amp Single Phase  
Glass Passivated  
Bridge Rectifier  
·
·
·
·
Plastic Package has Underwriters Laboratory  
Glass Passivated Chip Junction  
High Temperature Soldering Guaranteed  
High Surge Overload Rating  
50 to 1000 Volts  
Maximum Ratings  
GBU  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
3.2x45  
MCC  
Device  
Maximum  
RMS  
Voltage  
A
C
Part Number Marking  
N
N
N
I
G
K
H
B
J
1.90 RADIUS  
N
GBU4A  
GBU4B  
GBU4D  
GBU4G  
GBU4J  
GBU4K  
GBU4M  
---  
---  
---  
---  
---  
---  
---  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
-
+
~
~
D
140V  
280V  
420V  
560V  
700V  
L
E
M
F
DIMENSIONS  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
INCHES  
MM  
MIN  
21.80  
18.30  
3.30  
17.50  
0.76  
0.46  
Average Forward  
IF(AV)  
4 A  
Tc = 100°C  
DIM  
A
B
C
D
E
F
G
H
MIN  
.860  
.720  
.130  
.690  
.030  
.018  
.290  
.140  
MAX  
.880  
.740  
.140  
.710  
.039  
.022  
.310  
.160  
MAX  
22.30  
18.80  
3.56  
NOTE  
(NOTE 1,2 )  
Current  
Peak Forward Surge  
Current  
IFSM  
150A  
8.3ms, half sine  
18.00  
1.00  
0.56  
7.90  
4.10  
Maximum  
Instantaneous  
Forward Voltage  
IFM=2A  
7.40  
3.50  
VF  
IR  
1.0V  
TJ = 25°C  
I
J
K
L
M
N
.065  
.089  
.077  
.040  
.190  
.085  
.108  
.093  
.050  
.210  
1.65  
2.25  
1.95  
1.02  
4.83  
2.16  
2.75  
2.35  
1.27  
5.33  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
5 mA  
500uA  
TJ = 25°C  
TJ = 125°C  
7.0 TYPICAL  
Typical thermal  
resistance per leg  
Typical Junction  
Capacitance  
ROJC  
CJ  
2.2 /W  
45pF  
°C  
Measured at  
1.0MHz, VR=4.0V  
*Pulse Test: Pulse Width 300msec, Duty Cycle 1%  
www.mccsemi.com  

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