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GBU4A_09 PDF预览

GBU4A_09

更新时间: 2024-01-15 06:23:08
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飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 192K
描述
Bridge Rectifiers

GBU4A_09 数据手册

 浏览型号GBU4A_09的Datasheet PDF文件第2页浏览型号GBU4A_09的Datasheet PDF文件第3页 
July 2009  
GBU4A - GBU4M  
Bridge Rectifiers  
Features  
Glass passivated junction.  
Surge overload rating: 150 amperes peak.  
Reliable low cost construction utilizing molded plastic technique.  
Ideal for printed circuit board.  
UL certified, UL #E111753, UL # E326243.  
+
~
~
-
GBU  
Absolute Maximum Ratings * T = 25°C unless otherwise noted  
A
Value  
Symbol  
Parameter  
Units  
4A  
50  
4B  
100  
70  
4D  
200  
140  
200  
4G  
400  
280  
400  
4J  
600  
420  
600  
4K  
800  
560  
800  
4M  
V
Maximum Repetitive Reverse Voltage  
Maximum RMS Bridge Input Voltage  
1000  
700  
V
V
V
RRM  
V
35  
RMS  
V
DC Reverse Voltage (Rated V )  
R
50  
100  
1000  
R
I
Average Recitified Forward Current, @ T = 100°C  
A
@ T = 40°C  
4.0  
3.0  
A
A
F(AV)  
A
I
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half-Sine-Wave  
FSM  
150  
A
T
Storage Temperature Range  
-55 to +150  
-55 to +150  
°C  
°C  
STG  
T
Operating Junction Temperature  
J
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
P
Power Dissipation  
Thermal Resistance, Junction to Ambient, * per leg  
8
W
D
R
19  
°C/W  
θJA  
* Device mounted on PCB with 0.5 × 0.5” (12 × 12mm).  
Electrical Characteristics T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Forward Voltage, per element @ 4.0A  
Reverse Current, per element @ Rated V  
Value  
Units  
V
1.0  
V
F
I
T = 25°C  
A
T = 125°C  
5.0  
500  
µA  
µA  
R
R
A
2
2
I t Rating for Fusing  
t < 8.35ms  
93  
A s  
© 2009 Fairchild Semiconductor Corporation  
GBU4A - GBU4M Rev. C1  
www.fairchildsemi.com  
1

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