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GBPC5012 PDF预览

GBPC5012

更新时间: 2024-02-11 15:15:31
品牌 Logo 应用领域
ASEMI /
页数 文件大小 规格书
4页 71K
描述
50A GLASS PASSIVATED HIGH CURRENT SINGLE-PHASE BRIDGE RECTIFIER

GBPC5012 技术参数

生命周期:Active包装说明:S-PUFM-W4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.65
其他特性:UL RECOGNIZED最小击穿电压:1200 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:S-PUFM-W4最大非重复峰值正向电流:450 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:50 A
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:FLANGE MOUNT最大重复峰值反向电压:1200 V
表面贴装:NO端子形式:WIRE
端子位置:UPPERBase Number Matches:1

GBPC5012 数据手册

 浏览型号GBPC5012的Datasheet PDF文件第1页浏览型号GBPC5012的Datasheet PDF文件第3页浏览型号GBPC5012的Datasheet PDF文件第4页 
50  
100  
10  
Mounted on a  
229 x 152 x 127 mm  
AL finned plate  
25  
1.0  
0.1  
0.01  
Tj = 25°C  
Resistive or  
Inductive load  
Pulse Width = 300µs  
0
0
25  
50  
75  
100  
125  
150  
1.6  
1.8  
1.4  
0
0.2 0.4 0.6 0.8 1.0 1.2  
TC, CASE TEMPERATURE (°C)  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics (per element)  
Fig. 1 Forward. Current Derating Curve  
600  
450  
1000  
Single Half-Sine Wave  
(JEDEC Method)  
f = 1 Mhz  
Tj = 25°C  
300  
100  
150  
Tj = 150°C  
0
10  
1
10  
100  
0.1  
1.0  
VR, REVERSE VOLTAGE (V)  
Fig. 4 Typical Junction Capacitance (per element)  
10  
100  
NUMBER OF CYCLES AT 60 Hz  
Fig. 3 Max Non-Repetitive Surge Current  
100  
Tj = 125°C  
10  
1.0  
0.1  
Tj = 25°C  
0.01  
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
Fig. 5 Typical Reverse Characteristics (per element)  
www.asemi.tw  

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