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GBPC5012S PDF预览

GBPC5012S

更新时间: 2024-01-05 06:26:41
品牌 Logo 应用领域
WTE 整流二极管桥式整流二极管局域网
页数 文件大小 规格书
4页 73K
描述
50A GLASS PASSIVATED HIGH CURRENT SINGLE-PHASE BRIDGE RECTIFIER

GBPC5012S 技术参数

生命周期:Active包装说明:S-PUFM-W4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.65
其他特性:UL RECOGNIZED最小击穿电压:1200 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:S-PUFM-W4最大非重复峰值正向电流:450 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:50 A
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:FLANGE MOUNT最大重复峰值反向电压:1200 V
表面贴装:NO端子形式:WIRE
端子位置:UPPERBase Number Matches:1

GBPC5012S 数据手册

 浏览型号GBPC5012S的Datasheet PDF文件第2页浏览型号GBPC5012S的Datasheet PDF文件第3页浏览型号GBPC5012S的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
GBPC50S SERIES  
50A GLASS PASSIVATED HIGH CURRENT SINGLE-PHASE BRIDGE RECTIFIER  
Features  
Glass Passivated Die Construction  
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Designed for Saving Mounting Space  
Recognized File # E157705  
A
KBPC-S  
Min  
Dim  
A
Max  
28.70  
11.23  
21.00  
25.00  
J
28.40  
10.97  
B
C
-
~ ~ +  
D
E
5.10  
Mechanical Data  
C
G
H
1.20 Ø Typical  
3.05 3.60  
5.08 Ø Nominal  
Case: KBPC-S, Molded Plastic with Heatsink  
Internally Mounted in the Bridge Encapsulation  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
D
J
All Dimensions in mm  
E E  
Polarity: As Marked on Body  
METAL HEATSINK  
Mounting: Through Hole with #10 Screw  
Mounting Torque: 23 cm-kg (20 in-lbs) Max.  
Weight: 21 grams (approx.)  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
B
G
H
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
GBPC50  
Characteristic  
Symbol  
Unit  
00S 01S 02S 04S 06S 08S 10S 12S 14S 16S  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100 200 400 600 800 1000 1200 1400 1600  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
70  
140 280 420 560 700 840 980 1120  
50  
V
A
Average Rectified Output Current @TC = 50°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed  
on rated load (JEDEC Method)  
IFSM  
450  
A
Forward Voltage per leg  
@IF = 25A  
VFM  
IRM  
1.1  
V
Peak Reverse Current  
At Rated DC Blocking Voltage @TC = 125°C  
@TC = 25°C  
5.0  
500  
µA  
I2t Rating for Fusing (t < 8.3ms)  
I2t  
Cj  
800  
400  
A2s  
pF  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance per leg (Note 2)  
RMS Isolation Voltage from Case to Leads  
Operating and Storage Temperature Range  
RθJC  
VISO  
1.0  
°C/W  
V
2500  
Tj, TSTG  
-65 to +150  
°C  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Mounted on 229 x 152 x 127mm Al. finned plate.  
GBPC50S SERIES  
1 of 4  
© 2006 Won-Top Electronics  

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