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GBLA01-E3/51 PDF预览

GBLA01-E3/51

更新时间: 2024-11-25 15:32:51
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 82K
描述
RECTFR BRIDGE SGL 100V 4A 4PIN CASE GBL - Bulk

GBLA01-E3/51 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PSIP-T4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.51
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PSIP-T4JESD-609代码:e3
最大非重复峰值正向电流:120 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

GBLA01-E3/51 数据手册

 浏览型号GBLA01-E3/51的Datasheet PDF文件第2页浏览型号GBLA01-E3/51的Datasheet PDF文件第3页浏览型号GBLA01-E3/51的Datasheet PDF文件第4页 
GBLA005, GBLA01, GBLA02, GBLA04, GBLA06, GBLA08, GBLA10  
www.vishay.com  
Vishay General Semiconductor  
Glass Passivated Single-Phase Bridge Rectifier  
FEATURES  
• UL recognition, file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
~
• Typical IR less than 0.1 μA  
~
• High case dielectric strength  
~
~
Case Type GBL  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
Package  
GBL  
4 A  
General purpose use in AC/DC bridge full wave rectification  
for monitor, TV, printer, SMPS, adapter, audio equipment,  
and home appliances application.  
IF(AV)  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
IFSM  
IR  
120 A  
5 μA  
MECHANICAL DATA  
Case: GBL  
VF at IF = 4.0 A  
TJ max.  
1.0 V  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
150 °C  
In-Line  
Diode variations  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: As marked on body  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL GBLA005 GBLA01 GBLA02 GBLA04 GBLA06 GBLA08 GBLA10 UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
4.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
100  
1000  
T
C = 50 °C (1)  
Maximum average forward  
rectified output current at  
IF(AV)  
A
TA = 40 °C (2)  
3.0  
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
I2t  
120  
60  
A
Rating for fusing (t < 8.3 ms)  
A2s  
°C  
Operating junction and storage temperature  
range  
TJ, TSTG  
- 55 to + 150  
Notes  
(1)  
Unit mounted on 3.0" x 3.0" x 0.11" thick (7.5 cm x 7.5 cm x 0.3 cm) aluminum plate  
Unit mounted on PCB at 0.375" (9.5 mm) lead length and 0.5" x 0.5" (12 mm x 12 mm) copper pads  
(2)  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS SYMBOL GBLA005 GBLA01 GBLA02 GBLA04 GBLA06 GBLA08 GBLA10 UNIT  
Maximum  
instantaneousforward 4.0 A  
voltage drop per diode  
VF  
1.0  
V
Maximum DC reverse  
current at rated DC  
blocking voltage per  
diode  
TA = 25 °C  
5.0  
IR  
μA  
TA = 125 °C  
500  
Revision: 16-Aug-13  
Document Number: 88610  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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