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GBC857 PDF预览

GBC857

更新时间: 2024-10-28 03:39:07
品牌 Logo 应用领域
GTM 晶体晶体管局域网
页数 文件大小 规格书
2页 212K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

GBC857 数据手册

 浏览型号GBC857的Datasheet PDF文件第2页 
GTM CORPORATION  
Page : 1/2  
GBC857  
P N P E P I T AX I A L P L A N A R T R A N S I S T O R  
Description  
The GBC857 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.  
Package Dimensions  
SOT-23  
TPU.34)QBDLBHF*  
Millimeter  
Millimeter  
Min. Max.  
1.90 REF.  
REF.  
REF.  
Min.  
Max.  
3.10  
2.80  
1.60  
0.50  
0.10  
0.55  
A
B
C
D
E
F
2.70  
2.40  
1.40  
0.35  
0
G
H
K
J
L
M
1.00  
0.10  
0.40  
0.85  
0̓  
1.30  
0.20  
-
1.15  
10̓  
0.45  
Absolute Maximum Ratings at Ta = 25к  
Parameter  
Junction Temperature  
Storage Temperature  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
Ratings  
Unit  
ć
ć
V
Tj  
+150  
Tstg  
-55 ~ +150  
-50  
VCBO  
VCEO  
VEBO  
IC  
-45  
V
-5  
V
-100  
225  
mA  
mW  
Total Power Dissipation  
PD  
Characteristics at Ta = 25к  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Test Conditions  
BVCBO  
-50  
-
-
IC=-100uA  
IC=-1mA  
BVCEO  
BVEBO  
ICBO  
-45  
-
-
-
V
-5  
-
V
IE=-10uA  
VCB=-30V  
-
-
-90  
-250  
-700  
-900  
-
-15  
-300  
-650  
-
nA  
mV  
mV  
mV  
mV  
mV  
mV  
VCE(sat)1  
VCE(sat)2  
VBE(sat)1  
VBE(sat)2  
VBE(on)1  
VBE(on)2  
hFE  
-
IC=-10mA, IB=-0.5mA  
IC=-100mA, IB=-5mA  
IC=-10mA, IB=-0.5mA  
IC=-100mA, IB=-5mA  
VCE=-5V, IC=-2mA  
-
-
-
-
-600  
-750  
-800  
800  
-
-
110  
-
-
VCE=-5V, IC=-10mA  
VCE=-5V, IC=-2mA  
-
fT  
150  
-
MHz  
pF  
VCE=-5V, IC=-10mA  
VCB=-10V, f=1MHz, IE=0A  
Cob  
-
6
GTM Product Specification  

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