Datasheet > GB01SLT12-252

GB01SLT12-252

更新时间： 2024-10-28 12:24:35

品牌	Logo	应用领域
其他 - ETC		肖特基二极管光电二极管
页数	文件大小	规格书
4页	336K
描述
Silicon Carbide Power Schottky Diode

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中文翻译

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GB01SLT12-252 数据手册

GB01SLT12-252

Silicon Carbide Power

Schottky Diode

V_RRM

I_F

1200 V

1 A

Q_C

13 nC

Features

Package

 1200 V Schottky rectifier

 RoHS Compliant

 175 °C maximum operating temperature

 Temperature independent switching behavior

 Superior surge current capability

 Positive temperature coefficient of V_F

 Extremely fast switching speeds

 Superior figure of merit Q_C/I_F

PIN 1

PIN 2

CASE

TO – 252

Advantages

Applications

 Improved circuit efficiency (Lower overall cost)

 Low switching losses

 Ease of paralleling devices without thermal runaway

 Smaller heat sink requirements

 Power Factor Correction (PFC)

 Switched-Mode Power Supply (SMPS)

 Solar Inverters

 Wind Turbine Inverters

 Low reverse recovery current

 Low device capacitance

 Motor Drives

 Induction Heating

 Low reverse leakage current at operating temperature

 Uninterruptible Power Supply (UPS)

 High Voltage Multipliers

Maximum Ratings at T_j= 175 °C, unless otherwise specified

Parameter

Symbol

V_RRM

I_F

Conditions

Values

1200

Unit

Repetitive peak reverse voltage

Continuous forward current

RMS forward current

T_C≤ 160 °C

I_F(RMS)

T_C= 25 °C, t_P= 10 ms

T_C= 160 °C, t_P= 10 ms

T_C= 25 °C, t_P= 10 µs

T_C= 25 °C, t_P= 10 ms

T_C= 160 °C, t_P= 10 ms

T_C= 25 °C

0.5

0.3

Surge non-repetitive forward current, Half Sine

Wave

Non-repetitive peak forward current

I_F,SM

I_F,max

∫i²dt

I²t value

A²s

Power dissipation

P_tot

Operating and storage temperature

T_j, T_stg

-55 to 175

°C

Electrical Characteristics at T_j= 175 °C, unless otherwise specified

Values

Parameter

Diode forward voltage

Symbol

Conditions

Unit

min.

typ.

1.7

2.6

< 1

max.

I_F= 1 A, T_j= 25 °C

I_F= 1 A, T_j= 175 °C

2.0

3.0

V_F

I_R

V_R= 1200 V, T_j= 25 °C

V_R= 1200 V, T_j= 175 °C

Reverse current

µA

_R= 400 V

Total capacitive charge

Switching time

Q_C

t_s

I_F≤ I_F,MAX

dI_F/dt = 200 A/μs

T_j= 175 °C

V_R= 960 V

V_R= 400 V

V_R= 960 V

< 17

V_R= 1 V, f = 1 MHz, T_j= 25 °C

V_R= 400 V, f = 1 MHz, T_j= 25 °C

V_R= 1000 V, f = 1 MHz, T_j= 25 °C

Total capacitance

Thermal Characteristics

Thermal resistance, junction - case

R_thJC

3.6

0.6

°C/W

Mechanical Properties

Mounting torque

Dec 2012

http://www.genesicsemi.com/index.php/sic-products/schottky

Pg1 of 4

12 3 4

中文翻译

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