生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.65 |
其他特性: | ULTRA FAST | 配置: | SINGLE |
最大直流栅极触发电流: | 0.2 mA | JEDEC-95代码: | TO-18 |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
最低工作温度: | 封装主体材料: | METAL | |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
最大均方根通态电流: | 0.314 A | 断态重复峰值电压: | 60 V |
重复峰值反向电压: | 60 V | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GA300DD120S | INFINEON |
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Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | |
GA300DD120U | INFINEON |
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Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | |
GA300KD120S | INFINEON |
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Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | |
GA300KD120U | INFINEON |
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Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | |
GA300KS60U | INFINEON |
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Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel | |
GA300ND120S | INFINEON |
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Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | |
GA300TD60S | VISHAY |
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Dual INT-A-PAK Low Profile 'Half-Bridge' (Standard Speed IGBT), 300 A | |
GA300TD60U | INFINEON |
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HALF-BRIDGE IGBT DUAL INT-A-PAK | |
GA301 | MICROSEMI |
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SCRs Commercial Nanosecond Switching Planar | |
GA301A | MICROSEMI |
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SCRs Commercial Nanosecond Switching Planar |