Datasheet > 晶体管 > IGBT> GA250TS60U

GA250TS60U

更新时间： 2024-11-12 22:32:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
10页	232K
描述
HALF-BRIDGE IGBT INT-A-PAK

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中文翻译

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数据手册

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GA250TS60U 数据手册

PD - 50047D

GA250TS60U

Ultra-Fast Speed IGBT

"HALF-BRIDGE" IGBT INT-A-PAK

Features

V_CES= 600V

• Generation 4 IGBT technology

• UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

V_{CE(on) typ.}= 1.9V

• Very low conduction and switching losses

• HEXFRED^™antiparallel diodes with ultra- soft

recovery

@V = 15V, I_C= 250A

• Industry standard package

• UL approved

Benefits

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized for power conversion: UPS,

SMPS, Welding

• Lower EMI, requires less snubbing

Absolute Maximum Ratings

Parameter

Collector-to-Emitter Voltage

Max.

600

250

500

±20

2500

780

400

Units

V_CES

I_C@ T_C= 25°C

Continuous Collector Current

Pulsed Collector Current

I_CM

I_LM

Peak Switching Current

I_FM

Peak Diode Forward Current

Gate-to-Emitter Voltage

V_GE

V_ISOL

RMS Isolation Voltage, Any Terminal To Case, t = 1 min

Maximum Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

P_D@ T_C= 25°C

P_D@ T_C= 85°C

T_J

-40 to +150

-40 to +125

°C

T_STG

Thermal / Mechanical Characteristics

Parameter

Thermal Resistance, Junction-to-Case - IGBT

Typ.

—

Max.

0.16

0.35

—

Units

R_θJC

R_θCS

Thermal Resistance, Junction-to-Case - Diode

Thermal Resistance, Case-to-Sink - Module

Mounting Torque, Case-to-Heatsink

Mounting Torque, Case-to-Terminal 1, 2 & 3

Weight of Module

—

°C/W

0.1

—

6.0

N m

—

5.0

200

—

www.irf.com

05/14/02

12 3 4 5 6 7...10

中文翻译

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