5秒后页面跳转
G5853-13 PDF预览

G5853-13

更新时间: 2024-11-14 22:32:27
品牌 Logo 应用领域
HAMAMATSU 半导体光电二极管光电二极管
页数 文件大小 规格书
4页 262K
描述
InGaAs PIN photodiode

G5853-13 技术参数

是否无铅:含铅生命周期:Obsolete
包装说明:TO-8, 6 PINReach Compliance Code:unknown
HTS代码:8541.40.60.50风险等级:5.61
Is Samacsys:N配置:SINGLE
最大暗电源:150000 nA红外线范围:YES
安装特点:THROUGH HOLE MOUNT功能数量:1
最高工作温度:70 °C最低工作温度:-40 °C
光电设备类型:PIN PHOTODIODE峰值波长:2300 nm
最小反向击穿电压:2 V最大反向电压:2 V
半导体材料:InGaAs形状:ROUND
尺寸:3 mm子类别:Photo Diodes
表面贴装:NOBase Number Matches:1

G5853-13 数据手册

 浏览型号G5853-13的Datasheet PDF文件第2页浏览型号G5853-13的Datasheet PDF文件第3页浏览型号G5853-13的Datasheet PDF文件第4页 
P H O T O D I O D E  
InGaAs PIN photodiode  
G8423/G8373/G5853 series  
Long wavelength type (up to 2.6 µm)  
Features  
Applications  
Long cut-off wavelength: 2.6 µm  
Gas analysis  
3-pin TO-18 package: low price  
Thermoelectrically cooled TO-8 package: low dark current  
Active area: φ0.3 to φ3 mm  
Spectrophotometer  
NIR (near infrared) photometry  
Specifications / Absolute maximum ratings  
Absolute maximum ratings  
Thermistor TE-cooler Reverse Operating  
Active  
area  
Storage  
allowable voltage temperature temperature  
Dim ensional  
outline  
Type No.  
Package  
Cooling  
power  
dissipation  
current  
VR  
Topr  
Tstg  
(mm)  
φ0.3  
φ0.5  
φ1  
φ3  
φ0.3  
φ1  
φ3  
φ0.3  
φ1  
(mW)  
(A)  
(V)  
(°C)  
(°C)  
G8423-03  
G8423-05  
G8373-01  
G8373-03  
G5853-103  
G5853-11  
G5853-13  
G5853-203  
G5853-21  
G5853-23  
TO-18  
TO-5  
TO-8  
Non-cooled  
-
-
-40 to +85 -55 to +125  
-40 to +70 -55 to +85  
2
One-stage  
TE-cooled  
1.5  
1.0  
0.2  
Two-stage  
TE-cooled  
TO-8  
φ3  
Electrical and optical characteristics (Typ. unless otherwise noted)  
M easurem ent  
condition  
Cut-off  
frequency  
fc  
VR=1 V  
RL=50 Ω  
-3 dB  
Terminal  
capacitance  
Ct  
VR=1 V  
f=1 MHz  
Spectral  
response sensitivity sensitivity  
range  
λ
Peak  
Photo  
Shunt  
resistance  
Dark current  
ID  
VR=1 V  
NEP  
λ=λp  
D
λ=λp  
w avelength  
S
λ=λp  
Rsh  
=10 m V  
Element  
tem perature  
Type No.  
V
R
λp  
Typ.  
(µA)  
Max.  
(µA)  
(cm ·Hz1/2/W ) (W/Hz1/2)  
(MHz)  
(pF)  
40  
60  
200  
1800  
40  
200  
1800  
40  
(°C)  
25  
(µm)  
(µm)  
2.3  
(A/W)  
1.1  
(k)  
30  
15  
3
0.3  
300  
30  
3
G8423-03  
G8423-05  
G8373-01  
G8373-03  
G5853-103  
G5853-11  
G5853-13  
G5853-203  
G5853-21  
G5853-23  
2
5
15  
150  
0.2  
1.5  
15  
0.1  
0.8  
7.5  
20  
50  
75  
1500  
2
7.5  
150  
1
60  
50  
15  
1.5  
60  
15  
1.5  
60  
15  
1.5  
7 × 10-13  
1 × 10-12  
1.2 to 2.6  
5 × 1010  
2 × 10-12  
8 × 10-12  
3 × 10-13  
-10  
-20  
1.2 to 2.57  
1.2 to 2.55  
1 × 1011 7 × 10-13  
2 × 10-12  
600  
60  
6
2 × 10-13  
4
75  
200  
1800  
2 × 1011 5 × 10-13  
1.8 × 10-12  
1

与G5853-13相关器件

型号 品牌 获取价格 描述 数据表
G5853-203 HAMAMATSU

获取价格

InGaAs PIN photodiode
G5853-21 HAMAMATSU

获取价格

InGaAs PIN photodiode
G5853-23 HAMAMATSU

获取价格

InGaAs PIN photodiode
G5880 GMT

获取价格

Single Cell Li-Ion Battery Linear Charger Accepting USB and AC-Adapter Power Sources
G5881 GMT

获取价格

Single Cell Li-Ion Battery Linear Charger Accepting USB and AC-Adapter Power Sources
G5882 GMT

获取价格

Single Cell Li-Ion Battery Linear Charger Accepting USB and AC-Adapter Power Sources
G58W ETC

获取价格

Optoelectronic
G-59.31KOHM1% VISHAY

获取价格

RESISTOR, WIRE WOUND, 4 W, 1 %, 20 ppm, 9310 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
G-59.31OHM1% VISHAY

获取价格

RESISTOR, WIRE WOUND, 4 W, 1 %, 50 ppm, 9.31 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
G5904 GMT

获取价格

Four Channel High Efficiency White LED Driver