是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | R-XXMA-X |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.92 | 应用: | GENERAL PURPOSE |
配置: | COMPLEX | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | R-XXMA-X |
JESD-609代码: | e0 | 相数: | 1 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | MICROELECTRONIC ASSEMBLY | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | UNSPECIFIED |
端子位置: | UNSPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
G34120W1EBC1S | MICROSEMI |
获取价格 |
Rectifier Diode, 3 Phase, Silicon, | |
G34120W1EC1S | MICROSEMI |
获取价格 |
Rectifier Diode, 3 Phase, Silicon, | |
G34120W1EN1S | MICROSEMI |
获取价格 |
Silicon Power Rectifier Assemblies Plate Heatsink | |
G34120W1FB1S | MICROSEMI |
获取价格 |
Rectifier Diode, 3 Phase, Silicon, | |
G34120W1FBC1S | MICROSEMI |
获取价格 |
Rectifier Diode, 3 Phase, Silicon, | |
G34120W1TC1S | MICROSEMI |
获取价格 |
Rectifier Diode, 3 Phase, Silicon, | |
G34120X1EB1S | MICROSEMI |
获取价格 |
Silicon Power Rectifier Assemblies Plate Heatsink | |
G34120X1EBC1S | MICROSEMI |
获取价格 |
Rectifier Diode, 3 Phase, Silicon, | |
G34120X1EC1S | MICROSEMI |
获取价格 |
Rectifier Diode, 3 Phase, Silicon, | |
G34120X1EN1S | MICROSEMI |
获取价格 |
Silicon Power Rectifier Assemblies Plate Heatsink |